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5961-00-137-8076
20 Products
200906-701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378076
NSN
5961-00-137-8076
200906-701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378076
NSN
5961-00-137-8076
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200906 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MS1467
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378076
NSN
5961-00-137-8076
MFG
SOLITRON DEVICES INC.
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200906 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
201ZD
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001378079
NSN
5961-00-137-8079
MFG
POWEREX INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-037-0001
OVERALL HEIGHT: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
Related Searches:
68-5651
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001378079
NSN
5961-00-137-8079
68-5651
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001378079
NSN
5961-00-137-8079
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-037-0001
OVERALL HEIGHT: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
Related Searches:
941-037-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001378079
NSN
5961-00-137-8079
941-037-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001378079
NSN
5961-00-137-8079
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-037-0001
OVERALL HEIGHT: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
Related Searches:
134620-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
134620-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
THALES ATM INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-8753
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
HEWLETT PACKARD CO
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5921226
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
TADIRAN LTD
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
941-038-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
941-038-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
B162002-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
B162002-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
BUTLER NATIONAL CORP
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HP5082-3039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
HP5082-3039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378080
NSN
5961-00-137-8080
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95542-941-038 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
941-018-0002
RECTIFIER,SPECIAL
NSN, MFG P/N
5961001378110
NSN
5961-00-137-8110
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
III END ITEM IDENTIFICATION: AIRCRAFT MODEL A-6E
III FSC APPLICATION DATA: RADAR POWER SUPPLY
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-018-0002
SPEC/STD CONTROLLING DATA:
Related Searches:
SA2873
RECTIFIER,SPECIAL
NSN, MFG P/N
5961001378110
NSN
5961-00-137-8110
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: AIRCRAFT MODEL A-6E
III FSC APPLICATION DATA: RADAR POWER SUPPLY
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-018-0002
SPEC/STD CONTROLLING DATA:
Related Searches:
652-626-3
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378111
NSN
5961-00-137-8111
652-626-3
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378111
NSN
5961-00-137-8111
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: ATTACK AIRCRAFT MODEL A6
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-033-0003
SPEC/STD CONTROLLING DATA:
Related Searches:
941-033-0003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378111
NSN
5961-00-137-8111
941-033-0003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378111
NSN
5961-00-137-8111
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: ATTACK AIRCRAFT MODEL A6
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-033-0003
SPEC/STD CONTROLLING DATA:
Related Searches:
652-626-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378112
NSN
5961-00-137-8112
652-626-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378112
NSN
5961-00-137-8112
MFG
MICRO USPD INC
Description
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-033-0004
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE BRIDGE CIRCUIT
Related Searches:
941-033-0004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378112
NSN
5961-00-137-8112
941-033-0004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001378112
NSN
5961-00-137-8112
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-033-0004
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE BRIDGE CIRCUIT
Related Searches:
941-042-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378120
NSN
5961-00-137-8120
941-042-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378120
NSN
5961-00-137-8120
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-042-0001
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MA41293
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001378120
NSN
5961-00-137-8120
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 941-042-0001
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
3791-25023-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001378134
NSN
5961-00-137-8134
3791-25023-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001378134
NSN
5961-00-137-8134
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL HEIGHT: 0.312 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 TURRET
