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5961-01-109-7318
20 Products
0122-0083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011097318
NSN
5961-01-109-7318
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: SELECTIVE VOLTMETER
Related Searches:
4817-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011094166
NSN
5961-01-109-4166
MFG
L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4568A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SP
Related Searches:
FCT1122
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011094166
NSN
5961-01-109-4166
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4568A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SP
Related Searches:
FCT1629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011094166
NSN
5961-01-109-4166
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4568A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SP
Related Searches:
JAN1N4568A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011094166
NSN
5961-01-109-4166
JAN1N4568A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011094166
NSN
5961-01-109-4166
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4568A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SP
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555-4007
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
555-4007
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
MFG
DIALIGHT CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS ALL SEMICONDUCTOR
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL SEMICONDUCTOR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL ON VOLTAGE, FORWARD VOLTAGE DROP, DC ALL SEMICONDUCTOR
Related Searches:
958000P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
958000P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS ALL SEMICONDUCTOR
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL SEMICONDUCTOR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL ON VOLTAGE, FORWARD VOLTAGE DROP, DC ALL SEMICONDUCTOR
Related Searches:
G285958-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
G285958-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011094211
NSN
5961-01-109-4211
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS ALL SEMICONDUCTOR
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL SEMICONDUCTOR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL ON VOLTAGE, FORWARD VOLTAGE DROP, DC ALL SEMICONDUCTOR
Related Searches:
524496
TRANSISTOR
NSN, MFG P/N
5961011095386
NSN
5961-01-109-5386
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
TRANSISTOR
Related Searches:
4025889-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095387
NSN
5961-01-109-5387
4025889-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095387
NSN
5961-01-109-5387
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4998
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095548
NSN
5961-01-109-5548
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2588980
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2588980
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095548
NSN
5961-01-109-5548
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2588980
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
STC-784
RECTIFIER ASSY
NSN, MFG P/N
5961011095766
NSN
5961-01-109-5766
MFG
STEWART & STEVENSON POWER PRODUCTS LLC
Description
RECTIFIER ASSY
Related Searches:
5114463
TRANSISTOR
NSN, MFG P/N
5961011095984
NSN
5961-01-109-5984
MFG
SIMPSON ELECTRIC COMPANY DBA SUB OF LAC DU FLAMBEAU BAND OF LAKE SUPERIOR CHIPPEWA INDIA
Description
TRANSISTOR
Related Searches:
W-10875-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095985
NSN
5961-01-109-5985
MFG
HOBART BROTHERS COMPANY DBA ITW HOBART BROTHERS DIV HOBART GROUND POWER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SDS-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095986
NSN
5961-01-109-5986
MFG
DIODES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZ10939-314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095988
NSN
5961-01-109-5988
SZ10939-314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095988
NSN
5961-01-109-5988
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1.5M12Z10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095989
NSN
5961-01-109-5989
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
161-9023-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095990
NSN
5961-01-109-5990
161-9023-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011095990
NSN
5961-01-109-5990
MFG
GRANGER ASSOCIATES MS 1101
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZPD4.3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011096145
NSN
5961-01-109-6145
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FUNCTION FOR WHICH DESIGNED: REFERENCE AMPLIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
