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5961-00-503-0242
20 Products
1N69A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005030242
NSN
5961-00-503-0242
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
DESIGN CONTROL REFERENCE: 1N69A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
196011P126
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
196011P126
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
535986-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
JAN1N4986
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
JANTX1N4986A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
JANTX1N4986A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
SS4543
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
UZ115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005033671
NSN
5961-00-503-3671
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 31.60 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4986
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150
Related Searches:
1N279
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034034
NSN
5961-00-503-4034
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 1N279
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
224226
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034034
NSN
5961-00-503-4034
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
DESIGN CONTROL REFERENCE: 1N279
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4178595-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034034
NSN
5961-00-503-4034
4178595-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034034
NSN
5961-00-503-4034
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 1N279
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
5305G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034034
NSN
5961-00-503-4034
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 1N279
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4JA3011BH1AC1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034334
NSN
5961-00-503-4334
4JA3011BH1AC1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034334
NSN
5961-00-503-4334
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 999149-1
MANUFACTURERS CODE: 82577
MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W BY 0.4 IN.LG MTG SLOTS SPACED 3.100 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE AND INDUCTIVE;DC OUTPUT MAX VOLTAGE RATING
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
THE MANUFACTURERS DATA:
Related Searches:
999149-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034334
NSN
5961-00-503-4334
999149-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034334
NSN
5961-00-503-4334
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 999149-1
MANUFACTURERS CODE: 82577
MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W BY 0.4 IN.LG MTG SLOTS SPACED 3.100 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE AND INDUCTIVE;DC OUTPUT MAX VOLTAGE RATING
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
THE MANUFACTURERS DATA:
Related Searches:
2132939
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034372
NSN
5961-00-503-4372
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 500.0 MEGAHERTZ MINIMUM AND 1.5 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
Related Searches:
4610015165
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034372
NSN
5961-00-503-4372
4610015165
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034372
NSN
5961-00-503-4372
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 500.0 MEGAHERTZ MINIMUM AND 1.5 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
Related Searches:
8150
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005034372
NSN
5961-00-503-4372
MFG
AMPHENOL CORPORATION DBA COMMUNICATION NETWRK PDTS DIV
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 500.0 MEGAHERTZ MINIMUM AND 1.5 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
Related Searches:
720699-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034415
NSN
5961-00-503-4415
720699-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034415
NSN
5961-00-503-4415
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD6015
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034415
NSN
5961-00-503-4415
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: HD6015
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
353-0195-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034778
NSN
5961-00-503-4778
353-0195-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034778
NSN
5961-00-503-4778
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
54B6850-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034778
NSN
5961-00-503-4778
54B6850-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005034778
NSN
5961-00-503-4778
MFG
WESTINGHOUSE ELECTRIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM REVERSE VOLTAGE, PEAK
