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5961-00-480-9712
20 Products
240199-011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809712
NSN
5961-00-480-9712
240199-011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809712
NSN
5961-00-480-9712
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 30 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE GATE TO SOURCE BREAKDOWN VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1M82Z5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004806895
NSN
5961-00-480-6895
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3042B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.571 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT:
Related Searches:
JANTX1N3042B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004806895
NSN
5961-00-480-6895
JANTX1N3042B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004806895
NSN
5961-00-480-6895
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3042B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.571 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT:
Related Searches:
MA4298
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004806932
NSN
5961-00-480-6932
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.294 INCHES NOMINAL
OVERALL HEIGHT: 0.630 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
9190224
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004807597
NSN
5961-00-480-7597
9190224
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004807597
NSN
5961-00-480-7597
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MAJOR COMPONENTS: DIODE 2; TERMINAL BOARD 1
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
Related Searches:
240199-016
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
240199-016
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
316-0684-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
316-0684-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809692
NSN
5961-00-480-9692
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
240199-017
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
240199-017
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.503 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
316-0685-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
316-0685-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.503 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809694
NSN
5961-00-480-9694
MFG
DLA LAND AND MARITIME
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.503 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
240199-018
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809696
NSN
5961-00-480-9696
240199-018
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809696
NSN
5961-00-480-9696
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
316-0686-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809696
NSN
5961-00-480-9696
316-0686-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809696
NSN
5961-00-480-9696
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
8050000777
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004809699
NSN
5961-00-480-9699
8050000777
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004809699
NSN
5961-00-480-9699
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
240199-008
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809710
NSN
5961-00-480-9710
240199-008
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809710
NSN
5961-00-480-9710
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 97871-316-0612-001 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM B
Related Searches:
316-0612-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809710
NSN
5961-00-480-9710
316-0612-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809710
NSN
5961-00-480-9710
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 97871-316-0612-001 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM B
Related Searches:
240199-009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
240199-009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97871
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 316-0613-001
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 97871-316-0613-001 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY
Related Searches:
316-0613-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
316-0613-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97871
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 316-0613-001
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 97871-316-0613-001 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY
Related Searches:
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
ROM/PROM FAMILY 058
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809711
NSN
5961-00-480-9711
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 24 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97871
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 316-0613-001
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 97871-316-0613-001 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY
Related Searches:
316-0615-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809712
NSN
5961-00-480-9712
316-0615-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004809712
NSN
5961-00-480-9712
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 30 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE GATE TO SOURCE BREAKDOWN VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
