Featured Products

My Quote Request

No products added yet

5961-00-421-2412

20 Products

312-0524-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

View More Info

312-0524-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

MFG

VOUGHT AIRCRAFT INDUSTRIES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 89.0 MAXIMUM REVERSE VOLTAGE, PEAK

32-0524-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

View More Info

32-0524-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

MFG

RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 89.0 MAXIMUM REVERSE VOLTAGE, PEAK

T1253

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

View More Info

T1253

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212412

NSN

5961-00-421-2412

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 89.0 MAXIMUM REVERSE VOLTAGE, PEAK

Z51

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212550

NSN

5961-00-421-2550

View More Info

Z51

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212550

NSN

5961-00-421-2550

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z51
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 12255
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.359 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF

154153-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212973

NSN

5961-00-421-2973

View More Info

154153-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212973

NSN

5961-00-421-2973

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 MICROAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

SA1444G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212973

NSN

5961-00-421-2973

View More Info

SA1444G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212973

NSN

5961-00-421-2973

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 MICROAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

154153-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

View More Info

154153-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 154153-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SA1443G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

View More Info

SA1443G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

MFG

SEMTECH CORPORATION

Description

DESIGN CONTROL REFERENCE: 154153-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SDA277-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

View More Info

SDA277-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212974

NSN

5961-00-421-2974

MFG

SOLID STATE DEVICES INC.

Description

DESIGN CONTROL REFERENCE: 154153-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

0303-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

0303-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

C P D ENGINEERING INC DBA HOLT INSTRUMENT DIVISION DIV HOLT INSTRUMENT LABORATORIES

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

1N5347B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

1N5347B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

258467

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

258467

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

2605708-245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

2605708-245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

353-9010-271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

353-9010-271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

925115-5B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

925115-5B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

JANTX1N4958

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

JANTX1N4958

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

JANTX1N4958A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

JANTX1N4958A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

SS4515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

SS4515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

SZ10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

SZ10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

JAPLAR GROUP INC. DBA JAPLAR SCHAUER

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND

UZ9299-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

View More Info

UZ9299-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004212979

NSN

5961-00-421-2979

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 475.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4958
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: COUNTERMEASURE SET; B-52 SUPPORT EQUIPMENT; B-1 SUPPORT EQIPMENT; RADAR SET; AIRCRAFT; FIRE CONTROL SYSTEM; HARPOON MISSILE; AIRCRAFT, C-2A (REPR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND