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5961-00-489-7388

20 Products

531166-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004897388

NSN

5961-00-489-7388

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531166-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004897388

NSN

5961-00-489-7388

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 531166-4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
OVERALL DIAMETER: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

958-032-0001

TRANSISTOR

NSN, MFG P/N

5961004897396

NSN

5961-00-489-7396

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958-032-0001

TRANSISTOR

NSN, MFG P/N

5961004897396

NSN

5961-00-489-7396

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 958-032-0001
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

NX2N4260

TRANSISTOR

NSN, MFG P/N

5961004897396

NSN

5961-00-489-7396

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NX2N4260

TRANSISTOR

NSN, MFG P/N

5961004897396

NSN

5961-00-489-7396

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 958-032-0001
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

D1641

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004897776

NSN

5961-00-489-7776

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D1641

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004897776

NSN

5961-00-489-7776

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

CL905HLL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961004897805

NSN

5961-00-489-7805

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CL905HLL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961004897805

NSN

5961-00-489-7805

MFG

CLAIREX ELECTRONICS DIV OF CLAIREX CORP

V5126

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961004897805

NSN

5961-00-489-7805

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V5126

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961004897805

NSN

5961-00-489-7805

MFG

EDO

11292301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004898096

NSN

5961-00-489-8096

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11292301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004898096

NSN

5961-00-489-8096

MFG

BALLISTIC MISSILE DEFENSE SYSTEMS COMMAND

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 17773
MFR SOURCE CONTROLLING REFERENCE: 11292301
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N5160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004898096

NSN

5961-00-489-8096

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1N5160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004898096

NSN

5961-00-489-8096

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 17773
MFR SOURCE CONTROLLING REFERENCE: 11292301
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

ZD51A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900131

NSN

5961-00-490-0131

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ZD51A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900131

NSN

5961-00-490-0131

MFG

DIODES INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.281 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N4938

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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1N4938

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

4178600-543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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4178600-543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

847001-0019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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847001-0019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

9334 804 20000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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9334 804 20000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

A7333

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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A7333

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

AERONAUTICAL COMMUNICATIONS EQUIPMENT INC

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

F401

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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F401

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

NAUTEL MAINE INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

JAN1N4938

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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JAN1N4938

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

JAN1N4938A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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JAN1N4938A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

QAP29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

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QAP29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004900151

NSN

5961-00-490-0151

MFG

NAUTEL LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKI

MIS-13674/47

TRANSISTOR

NSN, MFG P/N

5961004900220

NSN

5961-00-490-0220

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MIS-13674/47

TRANSISTOR

NSN, MFG P/N

5961004900220

NSN

5961-00-490-0220

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: MIS-13674/47
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N3860

TRANSISTOR

NSN, MFG P/N

5961004900234

NSN

5961-00-490-0234

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2N3860

TRANSISTOR

NSN, MFG P/N

5961004900234

NSN

5961-00-490-0234

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5081 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN