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5961-00-552-4636
20 Products
247ASC1227-001
TRANSISTOR
NSN, MFG P/N
5961005524636
NSN
5961-00-552-4636
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 247ASC1227-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 30003
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
352-1015-020
TRANSISTOR
NSN, MFG P/N
5961005520803
NSN
5961-00-552-0803
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
91432231
TRANSISTOR
NSN, MFG P/N
5961005520803
NSN
5961-00-552-0803
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
851650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005520841
NSN
5961-00-552-0841
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.216 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
GA52562
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005520841
NSN
5961-00-552-0841
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.216 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SMC190086
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005520841
NSN
5961-00-552-0841
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.216 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DR368
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005521327
NSN
5961-00-552-1327
MFG
GENERAL SEMICONDUCTOR INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
SM-B-200786
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005521327
NSN
5961-00-552-1327
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
ST46
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005521327
NSN
5961-00-552-1327
MFG
EASTRON CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
10513063
TRANSISTOR
NSN, MFG P/N
5961005521355
NSN
5961-00-552-1355
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N119
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/2
OVERALL DIAMETER: 0.390 INCHES MINIMUM AND 0.496 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/2 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.468 INCHES MINIMUM AND 1.532 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
G243867
TRANSISTOR
NSN, MFG P/N
5961005521355
NSN
5961-00-552-1355
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N119
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/2
OVERALL DIAMETER: 0.390 INCHES MINIMUM AND 0.496 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/2 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.468 INCHES MINIMUM AND 1.532 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
JAN2N119
TRANSISTOR
NSN, MFG P/N
5961005521355
NSN
5961-00-552-1355
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N119
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/2
OVERALL DIAMETER: 0.390 INCHES MINIMUM AND 0.496 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/2 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.468 INCHES MINIMUM AND 1.532 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
TI905
TRANSISTOR
NSN, MFG P/N
5961005521355
NSN
5961-00-552-1355
MFG
RAYTHEON COMPANY
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N119
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/2
OVERALL DIAMETER: 0.390 INCHES MINIMUM AND 0.496 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MINIMUM AND 0.365 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/2 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.468 INCHES MINIMUM AND 1.532 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
353-2514-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521384
NSN
5961-00-552-1384
353-2514-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521384
NSN
5961-00-552-1384
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 71.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
OVERALL WIDTH: 0.135 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM AVERAGE TURN-OFF POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
575625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521384
NSN
5961-00-552-1384
MFG
STEWART-WARNER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 71.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
OVERALL WIDTH: 0.135 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM AVERAGE TURN-OFF POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
624C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521384
NSN
5961-00-552-1384
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 71.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
OVERALL WIDTH: 0.135 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM AVERAGE TURN-OFF POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N248A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521482
NSN
5961-00-552-1482
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 1N248A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
999196-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005521482
NSN
5961-00-552-1482
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 1N248A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
9330-971-90112
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005521663
NSN
5961-00-552-1663
9330-971-90112
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005521663
NSN
5961-00-552-1663
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: 9330-971-90112
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
2N2369A
TRANSISTOR
NSN, MFG P/N
5961005524636
NSN
5961-00-552-4636
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 247ASC1227-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 30003
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
