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5961-00-574-7039

20 Products

SCHF20000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005747039

NSN

5961-00-574-7039

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SCHF20000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005747039

NSN

5961-00-574-7039

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SCHF20000
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: SH879
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 3.500 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

472-0593-003

TRANSISTOR

NSN, MFG P/N

5961005751420

NSN

5961-00-575-1420

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472-0593-003

TRANSISTOR

NSN, MFG P/N

5961005751420

NSN

5961-00-575-1420

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 472-0593-003
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152

479-1192-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005751422

NSN

5961-00-575-1422

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479-1192-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005751422

NSN

5961-00-575-1422

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-1192-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
THE MANUFACTURERS DATA:

958-033-0006

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005754385

NSN

5961-00-575-4385

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958-033-0006

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961005754385

NSN

5961-00-575-4385

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

DESIGN CONTROL REFERENCE: 958-033-0006
MANUFACTURERS CODE: 95542
SPECIAL FEATURES: TWO NPN PLANAR TRANSISTORS,6 WIRE LEAD 50 IN.H;
THE MANUFACTURERS DATA:

CK719

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005756355

NSN

5961-00-575-6355

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CK719

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005756355

NSN

5961-00-575-6355

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: CK719
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:

3212081-10

TRANSISTOR

NSN, MFG P/N

5961005758866

NSN

5961-00-575-8866

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3212081-10

TRANSISTOR

NSN, MFG P/N

5961005758866

NSN

5961-00-575-8866

MFG

AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

SM0391

TRANSISTOR

NSN, MFG P/N

5961005758866

NSN

5961-00-575-8866

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SM0391

TRANSISTOR

NSN, MFG P/N

5961005758866

NSN

5961-00-575-8866

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1-1

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

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1-1

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

MFG

MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; 3.500 IN. LG; 1.750 IN. W; 1.437 IN. H; 2 THD STUDS

46150-506-08

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

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46150-506-08

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

MFG

TEREX USA LLC DBA CEDARAPIDS

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; 3.500 IN. LG; 1.750 IN. W; 1.437 IN. H; 2 THD STUDS

NW-15972

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

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NW-15972

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005759761

NSN

5961-00-575-9761

MFG

NMC/WOLLARD INC.

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; 3.500 IN. LG; 1.750 IN. W; 1.437 IN. H; 2 THD STUDS

2N4093

TRANSISTOR

NSN, MFG P/N

5961005759850

NSN

5961-00-575-9850

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2N4093

TRANSISTOR

NSN, MFG P/N

5961005759850

NSN

5961-00-575-9850

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000541-001
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

7000541-001

TRANSISTOR

NSN, MFG P/N

5961005759850

NSN

5961-00-575-9850

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7000541-001

TRANSISTOR

NSN, MFG P/N

5961005759850

NSN

5961-00-575-9850

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000541-001
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N3993

TRANSISTOR

NSN, MFG P/N

5961005760124

NSN

5961-00-576-0124

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2N3993

TRANSISTOR

NSN, MFG P/N

5961005760124

NSN

5961-00-576-0124

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000542-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE

7000542-001

TRANSISTOR

NSN, MFG P/N

5961005760124

NSN

5961-00-576-0124

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7000542-001

TRANSISTOR

NSN, MFG P/N

5961005760124

NSN

5961-00-576-0124

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000542-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE

1723-0605

TRANSISTOR

NSN, MFG P/N

5961005760195

NSN

5961-00-576-0195

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1723-0605

TRANSISTOR

NSN, MFG P/N

5961005760195

NSN

5961-00-576-0195

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000566
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN

7000566

TRANSISTOR

NSN, MFG P/N

5961005760195

NSN

5961-00-576-0195

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7000566

TRANSISTOR

NSN, MFG P/N

5961005760195

NSN

5961-00-576-0195

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000566
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN

578R763H01

TRANSISTOR

NSN, MFG P/N

5961005763056

NSN

5961-00-576-3056

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578R763H01

TRANSISTOR

NSN, MFG P/N

5961005763056

NSN

5961-00-576-3056

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 578R763H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 97942
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SPU8H

TRANSISTOR

NSN, MFG P/N

5961005763056

NSN

5961-00-576-3056

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SPU8H

TRANSISTOR

NSN, MFG P/N

5961005763056

NSN

5961-00-576-3056

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 578R763H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 97942
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N4156

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005763061

NSN

5961-00-576-3061

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1N4156

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005763061

NSN

5961-00-576-3061

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0072
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.8 MAXIMUM FORWARD VOLTAGE, DC

VCD0072

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005763061

NSN

5961-00-576-3061

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VCD0072

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005763061

NSN

5961-00-576-3061

MFG

SENIOR OPERATIONS INC DBA KETEMA AEROSPACE

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0072
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.8 MAXIMUM FORWARD VOLTAGE, DC