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5961-00-596-3284

20 Products

12040-0021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005963284

NSN

5961-00-596-3284

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12040-0021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005963284

NSN

5961-00-596-3284

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: MR820
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.316 INCHES MAXIMUM
OVERALL LENGTH: 0.316 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

JANTX1N4100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005959264

NSN

5961-00-595-9264

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JANTX1N4100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005959264

NSN

5961-00-595-9264

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1300.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4100
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOM

JANTXI4100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005959264

NSN

5961-00-595-9264

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JANTXI4100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005959264

NSN

5961-00-595-9264

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1300.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4100
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOM

ZB15B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960419

NSN

5961-00-596-0419

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ZB15B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960419

NSN

5961-00-596-0419

MFG

SEMICON COMPONENTS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

UES301R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960444

NSN

5961-00-596-0444

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UES301R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960444

NSN

5961-00-596-0444

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD

562654-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960459

NSN

5961-00-596-0459

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562654-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960459

NSN

5961-00-596-0459

MFG

EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT

Description

DESIGN CONTROL REFERENCE: 562654-001
MANUFACTURERS CODE: 55588
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N4605R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960501

NSN

5961-00-596-0501

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1N4605R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960501

NSN

5961-00-596-0501

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL LENGTH: 0.765 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEST FREQ 16000 MHZ; FREQ RANGE 12.5 TO 17.5 GHZ
SPECIFICATION/STANDARD DATA: 80131-RELEASE4910 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN

555275-105

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960501

NSN

5961-00-596-0501

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555275-105

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005960501

NSN

5961-00-596-0501

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL LENGTH: 0.765 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEST FREQ 16000 MHZ; FREQ RANGE 12.5 TO 17.5 GHZ
SPECIFICATION/STANDARD DATA: 80131-RELEASE4910 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN

KVP20

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005960531

NSN

5961-00-596-0531

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KVP20

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005960531

NSN

5961-00-596-0531

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

DESIGN CONTROL REFERENCE: KVP20
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;5.500 IN. LG;0.750 IN. W;0.750 IN. H;TWO TURRET TYPE TERMINALS
THE MANUFACTURERS DATA:

0443550000

TRANSISTOR

NSN, MFG P/N

5961005961741

NSN

5961-00-596-1741

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0443550000

TRANSISTOR

NSN, MFG P/N

5961005961741

NSN

5961-00-596-1741

MFG

SUNAIR ELECTRONICS LLC

353-6515-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

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353-6515-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 TAB, SOLDER LUG

69-4350

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

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69-4350

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 TAB, SOLDER LUG

DZ705080

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

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DZ705080

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 TAB, SOLDER LUG

SZ11887

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

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SZ11887

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962678

NSN

5961-00-596-2678

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 TAB, SOLDER LUG

1901-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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1901-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

BR COMMUNICATIONS INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

246236-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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246236-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

THALES ATM INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

28168-101-2-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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28168-101-2-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

ULTRA ELECTRONICS LIMITED SONAR & CO MMUNICATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

404413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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404413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

CARDION INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

FV1077423

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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FV1077423

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

QINETIQ

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

UM4001B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

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UM4001B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005962973

NSN

5961-00-596-2973

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 246236-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 65597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC