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5961-00-799-3194
20 Products
3-4M175Z5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007993194
NSN
5961-00-799-3194
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CE183523
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007993194
NSN
5961-00-799-3194
MFG
GREENFIELD MFG CO INC
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
S5018F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007993293
NSN
5961-00-799-3293
S5018F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007993293
NSN
5961-00-799-3293
MFG
ST-SEMICON INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.656 INCHES NOMINAL
SPECIAL FEATURES: STANDARD OCTAL BASE
TERMINAL TYPE AND QUANTITY: 8 PIN
Related Searches:
1N847
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007997356
NSN
5961-00-799-7356
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
DESIGN CONTROL REFERENCE: 1N847
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07933
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N1183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007997708
NSN
5961-00-799-7708
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1183 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N1171
TRANSISTOR
NSN, MFG P/N
5961007998497
NSN
5961-00-799-8497
MFG
GPD OPTOELECTRONICS CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 170.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
RELEASE 2710
TRANSISTOR
NSN, MFG P/N
5961007998497
NSN
5961-00-799-8497
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 170.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
525558-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007998538
NSN
5961-00-799-8538
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 525558-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73030
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
179-47-01-78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
179-47-01-78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
MFG
LITTON SYSTEMS INC AMECOM DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: FBL00-020
MANUFACTURERS CODE: 80103
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W SLOTS SPACED 4.330 IN.C TO C;LEAD TYPE:CAPACITIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
4JA411DX184
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
4JA411DX184
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
MFG
GENERAL ELECTRIC CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: FBL00-020
MANUFACTURERS CODE: 80103
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W SLOTS SPACED 4.330 IN.C TO C;LEAD TYPE:CAPACITIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
FBL00-020
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
FBL00-020
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: FBL00-020
MANUFACTURERS CODE: 80103
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W SLOTS SPACED 4.330 IN.C TO C;LEAD TYPE:CAPACITIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
L79-47-01-78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
L79-47-01-78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007998706
NSN
5961-00-799-8706
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA LAND & SELF PROTECTION SYSTEM DIVISION DIV LAND & SELF PROTECTION SYSTEMS DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: FBL00-020
MANUFACTURERS CODE: 80103
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W SLOTS SPACED 4.330 IN.C TO C;LEAD TYPE:CAPACITIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
12043-0125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007998708
NSN
5961-00-799-8708
12043-0125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007998708
NSN
5961-00-799-8708
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2088507-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007998708
NSN
5961-00-799-8708
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
651C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007998708
NSN
5961-00-799-8708
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2H336
TRANSISTOR
NSN, MFG P/N
5961007998718
NSN
5961-00-799-8718
MFG
KAY ELEMETRICS CORPORATION
Description
DESIGN CONTROL REFERENCE: 2H336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 80138
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
35-133
TRANSISTOR
NSN, MFG P/N
5961007998718
NSN
5961-00-799-8718
MFG
JOHN A. BECKER CO. THE DBA BECKER ELECTRIC SUPPLY
Description
DESIGN CONTROL REFERENCE: 2H336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 80138
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N2620A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007999009
NSN
5961-00-799-9009
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 1N2620A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N1530
TRANSISTOR
NSN, MFG P/N
5961007999010
NSN
5961-00-799-9010
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
534767-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007999850
NSN
5961-00-799-9850
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
