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5961-00-469-2189
20 Products
1N4144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004692189
NSN
5961-00-469-2189
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5554
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-420
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/420 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK RE
Related Searches:
2S026
TRANSISTOR
NSN, MFG P/N
5961004685992
NSN
5961-00-468-5992
MFG
BRITISH SAROZAL LTD
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0802
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 40-666-628-01
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.305 INCHES MINIMUM AND 0.345 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.373 INCHES MINIMUM AND 0.413 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 WIRE HOOK
VOLTAGE RATIN
Related Searches:
40-666-628-01
TRANSISTOR
NSN, MFG P/N
5961004685992
NSN
5961-00-468-5992
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0802
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 40-666-628-01
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.305 INCHES MINIMUM AND 0.345 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.373 INCHES MINIMUM AND 0.413 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 WIRE HOOK
VOLTAGE RATIN
Related Searches:
5961-99-037
TRANSISTOR
NSN, MFG P/N
5961004685992
NSN
5961-00-468-5992
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0802
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 40-666-628-01
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.305 INCHES MINIMUM AND 0.345 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.373 INCHES MINIMUM AND 0.413 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 WIRE HOOK
VOLTAGE RATIN
Related Searches:
10062432-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
10062432-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
104-462
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
104-462
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
CAE INC
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
119-0106
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
119-0106
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
KEPCO INC.
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
147-20001-158
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
147-20001-158
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
247AS-C1848-002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
247AS-C1848-002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
252-101012-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
252-101012-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
COMPRO COMPUTER SERVICES INC USE CAGE CODE 0NV92 FOR CATALOGING.
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
352250019753
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
352250019753
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
THALES NEDERLAND
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
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534-00-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
534-00-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
NORTH HILLS SIGNAL PROCESSING PORTA SYSTEMS CORP.
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
908-0002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
908-0002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
HUBBELL HARVEY INC PULSECOM DIV
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
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BP0119656
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
BP0119656
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
IL1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
SOMERS FILTER AND TODD CO
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
MCT2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
MONSANTO CO
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
MCT2/Q2118
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MCT2/Q2118
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
Q62703-Q23-F97
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
Q62703-Q23-F97
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004688427
NSN
5961-00-468-8427
MFG
EPCOS AG
Description
COMPONENT NAME AND QUANTITY: 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT SINGLE LIGHT EMITTING DIODE
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS OPTION SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE LIGHT EMITTING DIODE 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 6 PIN_!!
Related Searches:
1N5554
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004692189
NSN
5961-00-469-2189
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5554
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-420
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/420 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK RE
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203-095-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004692189
NSN
5961-00-469-2189
MFG
AUTOMATIC SWITCH COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5554
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-420
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/420 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK RE
