My Quote Request
No products added yet
5961-00-859-6002
20 Products
SM-B-337521
DISSIPATER,HEAT,TRA
NSN, MFG P/N
5961008596002
NSN
5961-00-859-6002
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
DISSIPATER,HEAT,TRA
Related Searches:
10557400
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008597804
NSN
5961-00-859-7804
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
23612
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008597804
NSN
5961-00-859-7804
MFG
WESTAMP INC
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
2N2818
TRANSISTOR
NSN, MFG P/N
5961008601321
NSN
5961-00-860-1321
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.500 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.1 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4347 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BRE
Related Searches:
2N278
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008602074
NSN
5961-00-860-2074
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9188902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008602385
NSN
5961-00-860-2385
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.124 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
V56E5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008602385
NSN
5961-00-860-2385
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.124 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
242-36572
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008602519
NSN
5961-00-860-2519
242-36572
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008602519
NSN
5961-00-860-2519
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
3160790
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008603502
NSN
5961-00-860-3502
MFG
GENERAL MOTORS CORP DELCO PRODUCTS DIV MACHINE CONTROL SYSTEMS
Description
DESIGN CONTROL REFERENCE: 3160790
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 72560
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
S3160790
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008603502
NSN
5961-00-860-3502
MFG
GENERAL MOTORS CORP
Description
DESIGN CONTROL REFERENCE: 3160790
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 72560
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
128C132H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008605461
NSN
5961-00-860-5461
128C132H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008605461
NSN
5961-00-860-5461
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DT50621G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008605461
NSN
5961-00-860-5461
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SV7350
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008605461
NSN
5961-00-860-5461
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ50544-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008605461
NSN
5961-00-860-5461
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1R30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008607683
NSN
5961-00-860-7683
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.550 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
B170017
TRANSISTOR
NSN, MFG P/N
5961008607826
NSN
5961-00-860-7826
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: B170017
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 21845
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.560 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
D5880B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008607943
NSN
5961-00-860-7943
MFG
SKYWORKS SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: D5880B
MANUFACTURERS CODE: 17540
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.556 INCHES MINIMUM AND 0.572 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE
Related Searches:
231887
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008608370
NSN
5961-00-860-8370
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
431699
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008608370
NSN
5961-00-860-8370
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DI51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008608370
NSN
5961-00-860-8370
MFG
DIODES INC
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
