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5961-00-892-0725
20 Products
352250009889
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920725
NSN
5961-00-892-0725
352250009889
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920725
NSN
5961-00-892-0725
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 90.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 20.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N250B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-134
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/134 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81249-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTA
Related Searches:
P-316-E-G-27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920620
NSN
5961-00-892-0620
P-316-E-G-27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920620
NSN
5961-00-892-0620
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 1.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2988B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPE
Related Searches:
1N3046B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920621
NSN
5961-00-892-0621
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3046B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLT
Related Searches:
4178600-218
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920621
NSN
5961-00-892-0621
4178600-218
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920621
NSN
5961-00-892-0621
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3046B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLT
Related Searches:
JAN1N3046B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920621
NSN
5961-00-892-0621
JAN1N3046B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920621
NSN
5961-00-892-0621
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3046B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLT
Related Searches:
1N1323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920627
NSN
5961-00-892-0627
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N1323A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920627
NSN
5961-00-892-0627
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N2135A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920629
NSN
5961-00-892-0629
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N2135A
DEPARTURE FROM CITED DESIGNATOR: MIL-S-19500/134 SIGC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-134
NONDEFINITIVE SPEC/STD DATA: 1N2135A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
B08514
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920629
NSN
5961-00-892-0629
MFG
MBDA UK LTD
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N2135A
DEPARTURE FROM CITED DESIGNATOR: MIL-S-19500/134 SIGC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-134
NONDEFINITIVE SPEC/STD DATA: 1N2135A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N1026
TRANSISTOR
NSN, MFG P/N
5961008920632
NSN
5961-00-892-0632
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N1026
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILT19500
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N1779A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920647
NSN
5961-00-892-0647
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99974
MFR SOURCE CONTROLLING REFERENCE: 7901749-115
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
3-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920647
NSN
5961-00-892-0647
MFG
KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99974
MFR SOURCE CONTROLLING REFERENCE: 7901749-115
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
7901749-115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920647
NSN
5961-00-892-0647
7901749-115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920647
NSN
5961-00-892-0647
MFG
DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99974
MFR SOURCE CONTROLLING REFERENCE: 7901749-115
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N540
TRANSISTOR
NSN, MFG P/N
5961008920661
NSN
5961-00-892-0661
MFG
SOLITRON DEVICES INC.
Description
DEPARTURE FROM CITED DESIGNATOR: N/A
DESIGN CONTROL REFERENCE: 2N540
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 21845
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: W/ONE NO. 8-32 THD MTG STUD ON TOP SIDE; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
SV3145A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920684
NSN
5961-00-892-0684
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N752A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920688
NSN
5961-00-892-0688
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DESIGN CONTROL REFERENCE: 1N752A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80131
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
436938
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920691
NSN
5961-00-892-0691
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
DESIGN CONTROL REFERENCE: 436938
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 56232
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1N448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920707
NSN
5961-00-892-0707
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N448
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 80131-RELEASE1585 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920719
NSN
5961-00-892-0719
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2574 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
303F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008920719
NSN
5961-00-892-0719
MFG
WESTINGHOUSE ELECTRIC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2574 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
