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5961-00-816-3167
20 Products
10M25Z5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163167
NSN
5961-00-816-3167
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1355A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158453
NSN
5961-00-815-8453
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1355A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
1JC7877H15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158454
NSN
5961-00-815-8454
1JC7877H15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158454
NSN
5961-00-815-8454
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 1JC7877H15
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
DZ30314H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158454
NSN
5961-00-815-8454
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 1JC7877H15
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
WA30-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158454
NSN
5961-00-815-8454
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 1JC7877H15
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
8050000768
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158458
NSN
5961-00-815-8458
8050000768
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008158458
NSN
5961-00-815-8458
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DEPARTURE FROM CITED DESIGNATOR: FEAT
DESIGN CONTROL REFERENCE: 8050000768
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: A REVERSE POLARITY,I.E. TOP TERMINAL IS NEGATIVE WITH RESPECT TO STUD,INCL SPECIAL MTG HARDWARE
SPECIFICATION/STANDARD DATA: 80131-RELEASE2215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
1N1372RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008159380
NSN
5961-00-815-9380
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N1372RA
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N1372RA TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
HZPR75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008159380
NSN
5961-00-815-9380
MFG
N A P SMD TECHNOLOGY INC
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N1372RA
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N1372RA TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N186A
TRANSISTOR
NSN, MFG P/N
5961008159655
NSN
5961-00-815-9655
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
435C368G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008160827
NSN
5961-00-816-0827
435C368G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008160827
NSN
5961-00-816-0827
MFG
WESTINGHOUSE ELECTRIC CORP
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: S435C368G01
MANUFACTURERS CODE: 11660
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
S435C368G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008160827
NSN
5961-00-816-0827
S435C368G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008160827
NSN
5961-00-816-0827
MFG
WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: S435C368G01
MANUFACTURERS CODE: 11660
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
Z103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008161241
NSN
5961-00-816-1241
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z103
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL HEIGHT: 0.360 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
Z140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008161242
NSN
5961-00-816-1242
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z140
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.725 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD41152
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
Z123
TRANSISTOR
NSN, MFG P/N
5961008161243
NSN
5961-00-816-1243
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z123
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.460 INCHES NOMINAL
OVERALL HEIGHT: 0.295 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD 41152
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
Z42
TRANSISTOR
NSN, MFG P/N
5961008161246
NSN
5961-00-816-1246
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: Z42
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL HEIGHT: 1.063 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD 41152
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2125310
TRANSISTOR
NSN, MFG P/N
5961008161308
NSN
5961-00-816-1308
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC F
Related Searches:
BUWEPSDWG2125310
TRANSISTOR
NSN, MFG P/N
5961008161308
NSN
5961-00-816-1308
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC F
Related Searches:
RT6766
TRANSISTOR
NSN, MFG P/N
5961008161308
NSN
5961-00-816-1308
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC F
Related Searches:
PS6315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008161608
NSN
5961-00-816-1608
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PS6315
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 01281
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.278 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.019 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N1600A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163107
NSN
5961-00-816-3107
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2547 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
