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5961-00-480-4642
20 Products
471000C17111-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804642
NSN
5961-00-480-4642
471000C17111-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804642
NSN
5961-00-480-4642
MFG
NAVAL AIR WARFARE CENTER TRAINING SYSTEMS DIV
Description
III END ITEM IDENTIFICATION: BULLPUP GROUND PILOT TRAINER
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 89297
MFR SOURCE CONTROLLING REFERENCE: 471000C17111-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N3715
TRANSISTOR
NSN, MFG P/N
5961004801791
NSN
5961-00-480-1791
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 94580-10031209 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR
Related Searches:
SJ4790H
TRANSISTOR
NSN, MFG P/N
5961004801791
NSN
5961-00-480-1791
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 94580-10031209 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR
Related Searches:
128C499H02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004802923
NSN
5961-00-480-2923
128C499H02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004802923
NSN
5961-00-480-2923
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.417 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
61365
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004802923
NSN
5961-00-480-2923
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.417 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SCR551H2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004802923
NSN
5961-00-480-2923
SCR551H2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004802923
NSN
5961-00-480-2923
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.417 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
426YDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803931
NSN
5961-00-480-3931
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
426YDIODE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803931
NSN
5961-00-480-3931
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
922-6109-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803960
NSN
5961-00-480-3960
922-6109-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803960
NSN
5961-00-480-3960
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 922-6109-011
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
922-6109-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803966
NSN
5961-00-480-3966
922-6109-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004803966
NSN
5961-00-480-3966
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 922-6109-021
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
353-3703-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804249
NSN
5961-00-480-4249
353-3703-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804249
NSN
5961-00-480-4249
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
INCLOSURE MATERIAL: PLASTIC AND CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.077 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES NOMINAL
TERMINAL LENGTH: 0.034 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
5082-8983
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804249
NSN
5961-00-480-4249
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
INCLOSURE MATERIAL: PLASTIC AND CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.077 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES NOMINAL
TERMINAL LENGTH: 0.034 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
A2X184
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804249
NSN
5961-00-480-4249
MFG
FEI MICROWAVE INC
Description
INCLOSURE MATERIAL: PLASTIC AND CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.077 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES NOMINAL
TERMINAL LENGTH: 0.034 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
9353-3712-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804272
NSN
5961-00-480-4272
9353-3712-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804272
NSN
5961-00-480-4272
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: MA41513
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MA41513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804272
NSN
5961-00-480-4272
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: MA41513
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
57110-0033-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804274
NSN
5961-00-480-4274
57110-0033-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804274
NSN
5961-00-480-4274
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.500 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A14A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804274
NSN
5961-00-480-4274
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.500 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
4JA1421EH20AB1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004804631
NSN
5961-00-480-4631
4JA1421EH20AB1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004804631
NSN
5961-00-480-4631
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4200.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 14304
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 6049-5104
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 120.0 DEG CELSIUS
OVERALL HEIGHT: 0.904 INCHES MINIMUM AND 0.937 INCHES MAXIMUM
OVERALL LENGTH: 5.447 INCHES MINIMUM AND 5.553 INCHES MAXIMUM
OVERALL WIDTH: 0.997 INCHES MINIMUM AND 1.003 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
6049-5104
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004804631
NSN
5961-00-480-4631
6049-5104
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004804631
NSN
5961-00-480-4631
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4200.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 14304
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 6049-5104
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 120.0 DEG CELSIUS
OVERALL HEIGHT: 0.904 INCHES MINIMUM AND 0.937 INCHES MAXIMUM
OVERALL LENGTH: 5.447 INCHES MINIMUM AND 5.553 INCHES MAXIMUM
OVERALL WIDTH: 0.997 INCHES MINIMUM AND 1.003 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
F50A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004804642
NSN
5961-00-480-4642
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: BULLPUP GROUND PILOT TRAINER
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 89297
MFR SOURCE CONTROLLING REFERENCE: 471000C17111-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
