My Quote Request
5961-00-901-3277
20 Products
07-0142-00
TRANSISTOR
NSN, MFG P/N
5961009013277
NSN
5961-00-901-3277
MFG
AEROFLEX WICHITA INC. DIV NEW CENTURY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
OVERALL DIAMETER: 0.415 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-EIA4314 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N3682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012863
NSN
5961-00-901-2863
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4006 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
Related Searches:
1N4045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.212 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N4045R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.212 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N4046
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.212 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N4047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.212 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE4215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
RELEASE4215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009012864
NSN
5961-00-901-2864
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.212 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4215 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N3796B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009013231
NSN
5961-00-901-3231
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE 3852
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009013231
NSN
5961-00-901-3231
RELEASE 3852
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009013231
NSN
5961-00-901-3231
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3N79
TRANSISTOR
NSN, MFG P/N
5961009013270
NSN
5961-00-901-3270
MFG
CRYSTALONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
Q531752031
TRANSISTOR
NSN, MFG P/N
5961009013270
NSN
5961-00-901-3270
MFG
RHEINMETALL AIR DEFENCE AG
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
RELEASE4212
TRANSISTOR
NSN, MFG P/N
5961009013270
NSN
5961-00-901-3270
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1850-0185
TRANSISTOR
NSN, MFG P/N
5961009013271
NSN
5961-00-901-3271
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2984 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, C
Related Searches:
2N1545
TRANSISTOR
NSN, MFG P/N
5961009013271
NSN
5961-00-901-3271
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2984 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, C
Related Searches:
345-124-013
TRANSISTOR
NSN, MFG P/N
5961009013271
NSN
5961-00-901-3271
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2984 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, C
Related Searches:
KS19171L2
TRANSISTOR
NSN, MFG P/N
5961009013271
NSN
5961-00-901-3271
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2984 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, C
Related Searches:
2N1185
TRANSISTOR
NSN, MFG P/N
5961009013272
NSN
5961-00-901-3272
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3334 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
472-0543-001
TRANSISTOR
NSN, MFG P/N
5961009013273
NSN
5961-00-901-3273
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 472-0543-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD AND SILVER
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N1495A
TRANSISTOR
NSN, MFG P/N
5961009013275
NSN
5961-00-901-3275
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-EIA3510 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
GVL20114A
TRANSISTOR
NSN, MFG P/N
5961009013275
NSN
5961-00-901-3275
MFG
UNISYS CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-EIA3510 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD