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5961-00-903-7475

20 Products

2N2528

TRANSISTOR

NSN, MFG P/N

5961009037475

NSN

5961-00-903-7475

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2N2528

TRANSISTOR

NSN, MFG P/N

5961009037475

NSN

5961-00-903-7475

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 1.530 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR

1N1348A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009035983

NSN

5961-00-903-5983

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1N1348A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009035983

NSN

5961-00-903-5983

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1348A TYPE
SEMICONDUCTOR MATERIAL: SILICON

1N3639

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036025

NSN

5961-00-903-6025

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1N3639

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036025

NSN

5961-00-903-6025

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES NOMINAL
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3684 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

BL5122

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036025

NSN

5961-00-903-6025

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BL5122

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036025

NSN

5961-00-903-6025

MFG

BREEZE-EASTERN CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES NOMINAL
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3684 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3791B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036130

NSN

5961-00-903-6130

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1N3791B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036130

NSN

5961-00-903-6130

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 31.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

8437272

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036130

NSN

5961-00-903-6130

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8437272

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036130

NSN

5961-00-903-6130

MFG

ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL

Description

CURRENT RATING PER CHARACTERISTIC: 31.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3852 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3741

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

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1N3741

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3925 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

34A840302-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

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34A840302-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

MFG

GENERAL ELECTRIC CO MOTOR BUSINESS GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3925 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

44A357741-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

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44A357741-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036177

NSN

5961-00-903-6177

MFG

GENERAL ELECTRIC CO ARMAMENT AND ELECTRICAL SYSTEMS DEPT ELECTRICAL SYSTEMS PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.218 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3925 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N958A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036178

NSN

5961-00-903-6178

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1N958A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036178

NSN

5961-00-903-6178

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2959 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

R257218-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036415

NSN

5961-00-903-6415

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R257218-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009036415

NSN

5961-00-903-6415

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.064 INCHES NOMINAL
OVERALL LENGTH: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE

104-430

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009036497

NSN

5961-00-903-6497

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104-430

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009036497

NSN

5961-00-903-6497

MFG

AVIONICS SPECIALTIES INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

217N2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009036497

NSN

5961-00-903-6497

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217N2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009036497

NSN

5961-00-903-6497

MFG

SPERRY RAND CORP SEMICONDUCTOR DIV

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

142WK

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009036681

NSN

5961-00-903-6681

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142WK

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009036681

NSN

5961-00-903-6681

MFG

RELIANCE COMM/TEC CORP LORAIN PRODUCTS DIV

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 55.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: MODEL NO. F25D50/SPEC 425-05/
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 6.652 INCHES NOMINAL
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 5.000 INCHES NOMINAL
SPECIAL FEATURES: FOUR 0.265 IN.BY 0.600 IN.SLOTS SPACED ON 2.000 IN.BY 7.066 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOLTAGE:280.0;TERMINAL TYPE AND QTY:BUS BAR,5

4JA3512CF1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009036681

NSN

5961-00-903-6681

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4JA3512CF1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009036681

NSN

5961-00-903-6681

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 55.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: MODEL NO. F25D50/SPEC 425-05/
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 6.652 INCHES NOMINAL
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 5.000 INCHES NOMINAL
SPECIAL FEATURES: FOUR 0.265 IN.BY 0.600 IN.SLOTS SPACED ON 2.000 IN.BY 7.066 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOLTAGE:280.0;TERMINAL TYPE AND QTY:BUS BAR,5

497343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

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497343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

720060

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

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720060

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

E0130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

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E0130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037319

NSN

5961-00-903-7319

MFG

GENERAL SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N2621A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037327

NSN

5961-00-903-7327

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1N2621A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037327

NSN

5961-00-903-7327

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.3 NOMINAL NOMINAL REGULATOR VOLTAGE

1N2621B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037327

NSN

5961-00-903-7327

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1N2621B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009037327

NSN

5961-00-903-7327

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.3 NOMINAL NOMINAL REGULATOR VOLTAGE