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5961-01-036-1639
20 Products
352258901654
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010361639
NSN
5961-01-036-1639
352258901654
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010361639
NSN
5961-01-036-1639
MFG
THALES NEDERLAND
Description
DESIGN CONTROL REFERENCE: PBT80
MANUFACTURERS CODE: 83701
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
CX174
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361146
NSN
5961-01-036-1146
MFG
UNITRODE CORP HIGH VOLTAGE DEVICES INC
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.395 INCHES MINIMUM AND 0.425 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
RA485
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361146
NSN
5961-01-036-1146
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.395 INCHES MINIMUM AND 0.425 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SPF-90
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361147
NSN
5961-01-036-1147
SPF-90
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361147
NSN
5961-01-036-1147
MFG
SOLITRON DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
Related Searches:
14011-0013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361149
NSN
5961-01-036-1149
14011-0013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361149
NSN
5961-01-036-1149
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SPECIAL FEATURES: FULL WAVE BRIDGE RECTIFIER;50 VDC BLOCKING VOLTAGE;35VRMS REVERSE VOLTAGE;0.600 IN. LG;0.600 IN. W;0.300 IN. HT;LEAD TYPE TERMINALS
Related Searches:
VS048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361149
NSN
5961-01-036-1149
VS048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010361149
NSN
5961-01-036-1149
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
SPECIAL FEATURES: FULL WAVE BRIDGE RECTIFIER;50 VDC BLOCKING VOLTAGE;35VRMS REVERSE VOLTAGE;0.600 IN. LG;0.600 IN. W;0.300 IN. HT;LEAD TYPE TERMINALS
Related Searches:
293291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361224
NSN
5961-01-036-1224
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
VZ16DC1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361224
NSN
5961-01-036-1224
MFG
TRANSTECTOR SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
36019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361225
NSN
5961-01-036-1225
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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MA-47110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361225
NSN
5961-01-036-1225
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
143-330-006
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
143-330-006
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 0.896 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG FACILITIES INCLUDED
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
AA550CRG180
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
AA550CRG180
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 0.896 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG FACILITIES INCLUDED
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
S34B12B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
S34B12B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 0.896 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG FACILITIES INCLUDED
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
SKT600/12D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
SKT600/12D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 0.896 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG FACILITIES INCLUDED
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
X18-5066
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
X18-5066
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361226
NSN
5961-01-036-1226
MFG
CLEVELAND MOTION CONTROLS INC. DBA C M C
Description
CURRENT RATING PER CHARACTERISTIC: 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 0.896 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG FACILITIES INCLUDED
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
36RC50A34
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361228
NSN
5961-01-036-1228
36RC50A34
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361228
NSN
5961-01-036-1228
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.750 INCHES MINIMUM AND 0.805 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.045 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
81RM50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361228
NSN
5961-01-036-1228
81RM50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010361228
NSN
5961-01-036-1228
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.750 INCHES MINIMUM AND 0.805 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.045 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N4150-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361274
NSN
5961-01-036-1274
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CAPACITANCE RATING IN PICOFARADS: 2.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 475.0 MILLIWATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932354 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
932354-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010361274
NSN
5961-01-036-1274
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CAPACITANCE RATING IN PICOFARADS: 2.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 475.0 MILLIWATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932354 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
19864
DIODE,BLOCK ASSEMBL
NSN, MFG P/N
5961010361319
NSN
5961-01-036-1319
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
DESIGN CONTROL REFERENCE: 19864
III END ITEM IDENTIFICATION: AIRCRAFT MODEL TA-7C
MANUFACTURERS CODE: 31435
THE MANUFACTURERS DATA:
