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5961-00-914-7498
20 Products
1901-0041
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147498
NSN
5961-00-914-7498
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3191556
TRANSISTOR
NSN, MFG P/N
5961009146511
NSN
5961-00-914-6511
MFG
GENERAL MOTORS CORP DELCO PRODUCTS DIV MACHINE CONTROL SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 170.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3574 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.610 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAK
Related Searches:
ED1873
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009146729
NSN
5961-00-914-6729
MFG
MURATA ERIE NORTH AMERICA INC DIVOF MURATA ERIE
Description
DESIGN CONTROL REFERENCE: ED1873
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12294
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1R15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009146752
NSN
5961-00-914-6752
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 17.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.550 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N3035
TRANSISTOR
NSN, MFG P/N
5961009146947
NSN
5961-00-914-6947
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2N3035A
TRANSISTOR
NSN, MFG P/N
5961009146947
NSN
5961-00-914-6947
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
353-6241-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
353-6241-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.170 INCHES NOMINAL
OVERALL LENGTH: 18.000 INCHES NOMINAL
OVERALL WIDTH: 11.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
353-6241-000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
353-6241-000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.170 INCHES NOMINAL
OVERALL LENGTH: 18.000 INCHES NOMINAL
OVERALL WIDTH: 11.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
67-7226
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
67-7226
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009147383
NSN
5961-00-914-7383
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.170 INCHES NOMINAL
OVERALL LENGTH: 18.000 INCHES NOMINAL
OVERALL WIDTH: 11.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
A25A309-015-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009147493
NSN
5961-00-914-7493
A25A309-015-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009147493
NSN
5961-00-914-7493
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
SPECIAL FEATURES: SILICON SINGLE PHASE HALF WAVE RECTIFIER;PEAK REVERSE VOLTAGE 20000.0 VOLTS MIN;FORWARD CURRENT 500.0 MA;2.500 IN. LG;1.000 IN. W;1.000 IN. H
Related Searches:
1901-0050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5961009147496
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
5961009147496
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FD6195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FDH6308
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
NPD185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S270
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SG5140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
TD81374
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
WG931
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147496
NSN
5961-00-914-7496
MFG
ITT SEMICONDUCTORS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
NDP190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009147498
NSN
5961-00-914-7498
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
