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5961-00-921-8581

20 Products

2-00055-521

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009218581

NSN

5961-00-921-8581

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2-00055-521

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009218581

NSN

5961-00-921-8581

MFG

ARMA DIV AMBAC INDUSTRIES INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18 ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.219 INCHES NOMINAL ALL TRANSISTOR
OVERALL LENGTH: 0.190 INCHES NOMINAL ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER

2-00055-527

TRANSISTOR

NSN, MFG P/N

5961009218582

NSN

5961-00-921-8582

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2-00055-527

TRANSISTOR

NSN, MFG P/N

5961009218582

NSN

5961-00-921-8582

MFG

ARMA DIV AMBAC INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 MAXIMUM EMITTER SUPPLY VOLTAGE

152-0066-001

SPACER,TRANSISTOR

NSN, MFG P/N

5961009221169

NSN

5961-00-922-1169

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152-0066-001

SPACER,TRANSISTOR

NSN, MFG P/N

5961009221169

NSN

5961-00-922-1169

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 152-0066-001
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NYLON,MIL-N-20695A TYPE I,0.340 IN. OD,0.080 IN. O/A THK
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: TESTED IN ACCORDANCE W/NAVORD OD 41152
THE MANUFACTURERS DATA:

Z1397

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221175

NSN

5961-00-922-1175

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Z1397

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221175

NSN

5961-00-922-1175

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z1397
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

Z1407

TRANSISTOR

NSN, MFG P/N

5961009221176

NSN

5961-00-922-1176

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Z1407

TRANSISTOR

NSN, MFG P/N

5961009221176

NSN

5961-00-922-1176

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z1407
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

Z1409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221177

NSN

5961-00-922-1177

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Z1409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221177

NSN

5961-00-922-1177

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z1409
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

2862552

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

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2862552

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: SC245D12X82
MANUFACTURERS CODE: 03508
SPECIAL FEATURES: SWITCH,TRIODE AC SEMICONDUCTOR;400 V;10 AMP RMS CONDUCTION CURRENT;5W PEAK GATE POWER DISSIPATION;0.475 IN. MAX LG;0.552 IN. ACROSS FLATS;MTG HARDWARE INCLUDED;STORAGE TEMP RANGE:MINUS 25.0 TO 150.0 DEG CELCIUS
THE MANUFACTURERS DATA:

SC245D12X82

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

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SC245D12X82

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

DESIGN CONTROL REFERENCE: SC245D12X82
MANUFACTURERS CODE: 03508
SPECIAL FEATURES: SWITCH,TRIODE AC SEMICONDUCTOR;400 V;10 AMP RMS CONDUCTION CURRENT;5W PEAK GATE POWER DISSIPATION;0.475 IN. MAX LG;0.552 IN. ACROSS FLATS;MTG HARDWARE INCLUDED;STORAGE TEMP RANGE:MINUS 25.0 TO 150.0 DEG CELCIUS
THE MANUFACTURERS DATA:

SES651

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

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SES651

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009221178

NSN

5961-00-922-1178

MFG

SEMITRONICS CORP

Description

DESIGN CONTROL REFERENCE: SC245D12X82
MANUFACTURERS CODE: 03508
SPECIAL FEATURES: SWITCH,TRIODE AC SEMICONDUCTOR;400 V;10 AMP RMS CONDUCTION CURRENT;5W PEAK GATE POWER DISSIPATION;0.475 IN. MAX LG;0.552 IN. ACROSS FLATS;MTG HARDWARE INCLUDED;STORAGE TEMP RANGE:MINUS 25.0 TO 150.0 DEG CELCIUS
THE MANUFACTURERS DATA:

2125383PC29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

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2125383PC29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2125383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

CD3110134

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

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CD3110134

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2125383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ700802C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

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DZ700802C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221179

NSN

5961-00-922-1179

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2125383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3287W

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221338

NSN

5961-00-922-1338

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1N3287W

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221338

NSN

5961-00-922-1338

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

DESIGN CONTROL REFERENCE: 1N3287W
MANUFACTURERS CODE: 93332
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

7000553-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221619

NSN

5961-00-922-1619

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7000553-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221619

NSN

5961-00-922-1619

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000553-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

UTR6410

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221619

NSN

5961-00-922-1619

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UTR6410

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009221619

NSN

5961-00-922-1619

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7000553-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

Z295

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009222849

NSN

5961-00-922-2849

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Z295

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009222849

NSN

5961-00-922-2849

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z295
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

JAN1N457

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009222850

NSN

5961-00-922-2850

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JAN1N457

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009222850

NSN

5961-00-922-2850

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK

720608-18

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009222945

NSN

5961-00-922-2945

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720608-18

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009222945

NSN

5961-00-922-2945

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY:

FA2312E

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009222945

NSN

5961-00-922-2945

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FA2312E

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009222945

NSN

5961-00-922-2945

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY:

44A354345-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009224760

NSN

5961-00-922-4760

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44A354345-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009224760

NSN

5961-00-922-4760

MFG

GENICOM CORP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.249 INCHES NOMINAL
TERMINAL LENGTH: 1.504 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD