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5961-00-952-2332

20 Products

1021H

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522332

NSN

5961-00-952-2332

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1021H

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522332

NSN

5961-00-952-2332

MFG

SAGE LABORATORIES INC.

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21E TYPE NO.
COAXIAL CONNECTOR SERIES DESIGNATION: N
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 1.0 GIGAHERTZ MINIMUM AND 15.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.844 INCHES NOMINAL
OVERALL LENGTH: 2.359 INCHES NOMINAL

606410

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522332

NSN

5961-00-952-2332

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606410

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522332

NSN

5961-00-952-2332

MFG

TEXTRON SYSTEMS CORPORATION DBA TEXTRON DEFENSE SYSTEMS

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21E TYPE NO.
COAXIAL CONNECTOR SERIES DESIGNATION: N
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 1.0 GIGAHERTZ MINIMUM AND 15.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.844 INCHES NOMINAL
OVERALL LENGTH: 2.359 INCHES NOMINAL

48P207219

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522854

NSN

5961-00-952-2854

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48P207219

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522854

NSN

5961-00-952-2854

MFG

HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 40.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 690.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 98738
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 48P207219
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -54.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: FOUR NO. 4/0.122/ IN.-40 THD MTG HOLES ON 0.750 IN.BY 1 IN. MTG CENTERS;ENIRONMENTAL PROTECTION:MOISTURE;INCLOSURE FEATURE:METAL CASE;DC OUTPUT MAX VOLTAGE RATING:630.0;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

PS2741

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522854

NSN

5961-00-952-2854

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PS2741

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009522854

NSN

5961-00-952-2854

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 40.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 690.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 98738
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 48P207219
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -54.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: FOUR NO. 4/0.122/ IN.-40 THD MTG HOLES ON 0.750 IN.BY 1 IN. MTG CENTERS;ENIRONMENTAL PROTECTION:MOISTURE;INCLOSURE FEATURE:METAL CASE;DC OUTPUT MAX VOLTAGE RATING:630.0;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

352-0153-000

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

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352-0153-000

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N341
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/31
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/31 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.203 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1

752745

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

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752745

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N341
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/31
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/31 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.203 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1

JAN2N341

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

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JAN2N341

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N341
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/31
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/31 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.203 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1

SM-D-337028

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

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SM-D-337028

TRANSISTOR

NSN, MFG P/N

5961009523014

NSN

5961-00-952-3014

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N341
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/31
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/31 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.203 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1

L2088305-2REVG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523038

NSN

5961-00-952-3038

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L2088305-2REVG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523038

NSN

5961-00-952-3038

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

DESIGN CONTROL REFERENCE: L2088305-2REVG
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 27914
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2088305-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523040

NSN

5961-00-952-3040

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2088305-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523040

NSN

5961-00-952-3040

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

DESIGN CONTROL REFERENCE: 2088305-0003
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 27914
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SV3504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523040

NSN

5961-00-952-3040

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SV3504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009523040

NSN

5961-00-952-3040

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: 2088305-0003
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 27914
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N3575

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525565

NSN

5961-00-952-5565

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1N3575

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525565

NSN

5961-00-952-5565

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3530 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

2090244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525604

NSN

5961-00-952-5604

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2090244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525604

NSN

5961-00-952-5604

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2090244
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N3148

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525681

NSN

5961-00-952-5681

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1N3148

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009525681

NSN

5961-00-952-5681

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3482 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

472-0431-001

TRANSISTOR

NSN, MFG P/N

5961009525696

NSN

5961-00-952-5696

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472-0431-001

TRANSISTOR

NSN, MFG P/N

5961009525696

NSN

5961-00-952-5696

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE,
~1: COLLECTOR OPEN

SP310

TRANSISTOR

NSN, MFG P/N

5961009525696

NSN

5961-00-952-5696

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SP310

TRANSISTOR

NSN, MFG P/N

5961009525696

NSN

5961-00-952-5696

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE,
~1: COLLECTOR OPEN

369214

TRANSISTOR

NSN, MFG P/N

5961009526151

NSN

5961-00-952-6151

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369214

TRANSISTOR

NSN, MFG P/N

5961009526151

NSN

5961-00-952-6151

MFG

INTERNATIONAL BUSINESS MACHINES CORP

Description

DESIGN CONTROL REFERENCE: 369214
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 89264
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.144 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF

4036887P3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526169

NSN

5961-00-952-6169

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4036887P3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526169

NSN

5961-00-952-6169

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

HR3-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526169

NSN

5961-00-952-6169

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HR3-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526169

NSN

5961-00-952-6169

MFG

HYSON ELECTRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

3/4M24Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526170

NSN

5961-00-952-6170

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3/4M24Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009526170

NSN

5961-00-952-6170

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE