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5961-00-710-0369
20 Products
HD10338
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007100369
NSN
5961-00-710-0369
MFG
HYSON ELECTRONICS CORP
Description
DESIGN CONTROL REFERENCE: HD10338
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 56857
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HR10338
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007100369
NSN
5961-00-710-0369
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD10338
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 56857
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
10167682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102423
NSN
5961-00-710-2423
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 59.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1902-0171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102423
NSN
5961-00-710-2423
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 59.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N2999B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102423
NSN
5961-00-710-2423
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 59.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
G31H56H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102423
NSN
5961-00-710-2423
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 59.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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GS810DR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102771
NSN
5961-00-710-2771
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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HD5000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007102771
NSN
5961-00-710-2771
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.172 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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13211E0135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
13211E0135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
CECOM LR CENTER
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
26919
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
FAIRCHILD CONTROLS CORPORATION
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
50031714
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
50031714
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
BUREAU DE GESTION OTAN HAWK
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
745315B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
745315B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
AIR-A-PLANE CORP
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
8497-114-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
8497-114-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
CHIEF OF ENGINEERS DEPT OF ARMY
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
D8497-114-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
D8497-114-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
KECO INDUSTRIES INC.
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
TD6C1B3A1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
TD6C1B3A1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
PD & E ELECTRONICS LLC
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
TD6SS189
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
TD6SS189
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961007102777
NSN
5961-00-710-2777
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 5.060 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
Related Searches:
124-2719-00
TRANSISTOR
NSN, MFG P/N
5961007102780
NSN
5961-00-710-2780
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTE
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2N636A
TRANSISTOR
NSN, MFG P/N
5961007102780
NSN
5961-00-710-2780
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTE
Related Searches:
2N1493
TRANSISTOR
NSN, MFG P/N
5961007102798
NSN
5961-00-710-2798
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER,
Related Searches:
31191-3680
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007103044
NSN
5961-00-710-3044
31191-3680
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007103044
NSN
5961-00-710-3044
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 31191-3680
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 97942
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
