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5961-00-992-5511
20 Products
353-1784-00
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009925511
NSN
5961-00-992-5511
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVIC
Related Searches:
353-1784-000
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009925511
NSN
5961-00-992-5511
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
SEMICONDUCTOR DEVIC
Related Searches:
69-1597
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009925511
NSN
5961-00-992-5511
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SEMICONDUCTOR DEVIC
Related Searches:
4JA1011FF1AD2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009925528
NSN
5961-00-992-5528
4JA1011FF1AD2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009925528
NSN
5961-00-992-5528
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.400 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: K3160Z1EB1
MANUFACTURERS CODE: 58849
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 25.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 7.000 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO NO.4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
K3160Z1EB1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009925528
NSN
5961-00-992-5528
K3160Z1EB1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009925528
NSN
5961-00-992-5528
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.400 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: K3160Z1EB1
MANUFACTURERS CODE: 58849
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 25.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 7.000 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO NO.4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
UZ5730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925531
NSN
5961-00-992-5531
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
211236
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925533
NSN
5961-00-992-5533
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
15G1011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925535
NSN
5961-00-992-5535
MFG
STRIEGEL SUPPLY INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 37.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.442 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
850-34604-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925535
NSN
5961-00-992-5535
850-34604-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925535
NSN
5961-00-992-5535
MFG
KATO ENGINEERING INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 37.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.442 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
S3260
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009925535
NSN
5961-00-992-5535
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 37.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.442 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
720654-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009926411
NSN
5961-00-992-6411
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4JA411MB3AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009926595
NSN
5961-00-992-6595
4JA411MB3AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009926595
NSN
5961-00-992-6595
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 6.080 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
13213E0071-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009928512
NSN
5961-00-992-8512
13213E0071-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009928512
NSN
5961-00-992-8512
MFG
CECOM LR CENTER
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 97403
MFR SOURCE CONTROLLING REFERENCE: 13213E0071-4
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
A41A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009928512
NSN
5961-00-992-8512
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 97403
MFR SOURCE CONTROLLING REFERENCE: 13213E0071-4
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
8487104-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009929520
NSN
5961-00-992-9520
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
DESIGN CONTROL REFERENCE: PS2940
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PS2940
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009929520
NSN
5961-00-992-9520
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PS2940
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2064260
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009930705
NSN
5961-00-993-0705
2064260
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009930705
NSN
5961-00-993-0705
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 2064260
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98738
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
C10CX196
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009930705
NSN
5961-00-993-0705
C10CX196
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009930705
NSN
5961-00-993-0705
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: 2064260
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98738
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
44B251461-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009930707
NSN
5961-00-993-0707
44B251461-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009930707
NSN
5961-00-993-0707
MFG
GENICOM CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.04 AMPERES MAXIMUM REVERSE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.938 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1133548
TRANSISTOR
NSN, MFG P/N
5961009930986
NSN
5961-00-993-0986
MFG
BELFORT INSTRUMENT COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: -6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2954 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
