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5961-01-057-9438
20 Products
3N154
TRANSISTOR
NSN, MFG P/N
5961010579438
NSN
5961-01-057-9438
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
A700-2010
TRANSISTOR
NSN, MFG P/N
5961010580911
NSN
5961-01-058-0911
MFG
ESSEX ELECTRO ENGINEERS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 21269-A700-2010 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
151-0361-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010581034
NSN
5961-01-058-1034
151-0361-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010581034
NSN
5961-01-058-1034
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
TD-702
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010581034
NSN
5961-01-058-1034
TD-702
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010581034
NSN
5961-01-058-1034
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
94262016
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010581343
NSN
5961-01-058-1343
94262016
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010581343
NSN
5961-01-058-1343
MFG
CERIDIAN CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 25.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 1.135 INCHES MINIMUM AND 1.195 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.535 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
JAN2N5237
TRANSISTOR
NSN, MFG P/N
5961010581407
NSN
5961-01-058-1407
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5237
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/394
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDA
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153-0055-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010581408
NSN
5961-01-058-1408
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
426F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581409
NSN
5961-01-058-1409
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.642 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
426FDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581409
NSN
5961-01-058-1409
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.642 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
JANTXV1N825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581410
NSN
5961-01-058-1410
JANTXV1N825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581410
NSN
5961-01-058-1410
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N825
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/159
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOL
Related Searches:
TZC56C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581411
NSN
5961-01-058-1411
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 89.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ720T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581412
NSN
5961-01-058-1412
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PRECIOUS MATERIAL: GOLD AND SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 1.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1133088G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28528-1133088 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
17-123787-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
17-123787-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28528-1133088 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
4803303-03081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
4803303-03081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
MFG
OCEAN APPLIED RESEARCH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28528-1133088 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-3081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28528-1133088 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A5S138
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010581413
NSN
5961-01-058-1413
MFG
AGFA NDT INC KRAUTKRAMER ULTRASONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28528-1133088 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
800516-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010581933
NSN
5961-01-058-1933
800516-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010581933
NSN
5961-01-058-1933
MFG
SAGA ENGINEERING CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
DPC 117
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010581933
NSN
5961-01-058-1933
DPC 117
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010581933
NSN
5961-01-058-1933
MFG
DATA PRODUCTS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
2SC634
TRANSISTOR
NSN, MFG P/N
5961010581979
NSN
5961-01-058-1979
MFG
SONY CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2SC634A
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: S0482
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.236 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 320.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.354 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
