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5961-00-997-5175

20 Products

300U30A

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

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300U30A

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

S5330

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

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S5330

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

MFG

FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

W10931-3

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

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W10931-3

TRANSISTOR

NSN, MFG P/N

5961009975175

NSN

5961-00-997-5175

MFG

HOBART BROS CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

300UR30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

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300UR30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.937 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

R5330

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

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R5330

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

MFG

FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS

Description

CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.937 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

W10933-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

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W10933-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975176

NSN

5961-00-997-5176

MFG

HOBART BROS CO

Description

CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.937 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1CZ-93B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975177

NSN

5961-00-997-5177

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1CZ-93B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009975177

NSN

5961-00-997-5177

MFG

HOBART BROS CO

353-6470-010

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

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353-6470-010

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.775 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
SPECIAL FEATURES: TWO NO. 4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TURRET

4JA1423PX24

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

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4JA1423PX24

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.775 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
SPECIAL FEATURES: TWO NO. 4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TURRET

67-6187

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

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67-6187

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.775 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
SPECIAL FEATURES: TWO NO. 4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TURRET

A723EX39

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

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A723EX39

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.775 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
SPECIAL FEATURES: TWO NO. 4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TURRET

SA3925

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

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SA3925

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009975636

NSN

5961-00-997-5636

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.775 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
SPECIAL FEATURES: TWO NO. 4-40 THD HOLES SPACED 0.962 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;INCLOSURE FEATURE:ENCAPSULATED;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TURRET

353-6470-020

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

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353-6470-020

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

4JA1423PBX49

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

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4JA1423PBX49

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

67-6188

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

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67-6188

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

SA3926

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

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SA3926

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975637

NSN

5961-00-997-5637

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.910 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

00606296011098

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975746

NSN

5961-00-997-5746

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00606296011098

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975746

NSN

5961-00-997-5746

MFG

THE TECHNICAL MATERIAL CORPORATION DBA T M C

Description

SPECIAL FEATURES: METAL;RECTIFIER HALF WAVE;10400 VOLTS;750 MA;M55 DEG C TO P125 DEG C OPERATING TEMP RANGE;5.937 IN. LG;1.375 IN. DIA;4 PIN-TYPE TERMINALS

C699

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975746

NSN

5961-00-997-5746

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C699

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975746

NSN

5961-00-997-5746

MFG

SOLITRON DEVICES INC.

Description

SPECIAL FEATURES: METAL;RECTIFIER HALF WAVE;10400 VOLTS;750 MA;M55 DEG C TO P125 DEG C OPERATING TEMP RANGE;5.937 IN. LG;1.375 IN. DIA;4 PIN-TYPE TERMINALS

DMS 77025B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975865

NSN

5961-00-997-5865

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DMS 77025B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975865

NSN

5961-00-997-5865

MFG

DLA LAND AND MARITIME

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB

MDA920-7

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975865

NSN

5961-00-997-5865

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MDA920-7

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009975865

NSN

5961-00-997-5865

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB