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5961-00-998-9314

20 Products

115015-001

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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115015-001

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN

MCR2222

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009987001

NSN

5961-00-998-7001

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MCR2222

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009987001

NSN

5961-00-998-7001

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

2N3896

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009987489

NSN

5961-00-998-7489

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2N3896

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009987489

NSN

5961-00-998-7489

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.502 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

2N3896A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009987489

NSN

5961-00-998-7489

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2N3896A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009987489

NSN

5961-00-998-7489

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.502 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

125-410

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

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125-410

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

MFG

FEDERAL SIGNAL INTERNATIONAL FSC LTD DIV ELECTRICAL PRODUCTS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

125B410

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

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125B410

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

MFG

FEDERAL SIGNAL CORPORATION DBA FEDERAL SIGNAL-CODESPEAR DIV PUBLIC SAFETY SYSTEMS INDUSTRIAL / COMMERCIAL SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

4031L

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

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4031L

TRANSISTOR

NSN, MFG P/N

5961009987496

NSN

5961-00-998-7496

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

1450525-10

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

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1450525-10

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

MFG

SENSOR AND ANTENNA SYSTEMS LANSDALE INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2480474G1

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

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2480474G1

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

MFG

ITT CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

CM644

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

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CM644

TRANSISTOR

NSN, MFG P/N

5961009989059

NSN

5961-00-998-9059

MFG

CRYSTALONICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

4017207-0701

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

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4017207-0701

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

MFG

RAYTHEON COMPANY DBA RAYTHEON

FSA1191

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

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FSA1191

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

MFG

FAIRCHILD SEMICONDUCTOR CORP

G181-583-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

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G181-583-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009989248

NSN

5961-00-998-9248

MFG

SINGER CO THE KEARFOTT DIV

2073170-0701

TRANSISTOR

NSN, MFG P/N

5961009989259

NSN

5961-00-998-9259

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2073170-0701

TRANSISTOR

NSN, MFG P/N

5961009989259

NSN

5961-00-998-9259

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: C680
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 12498
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

C680

TRANSISTOR

NSN, MFG P/N

5961009989259

NSN

5961-00-998-9259

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C680

TRANSISTOR

NSN, MFG P/N

5961009989259

NSN

5961-00-998-9259

MFG

CRYSTALONICS INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: C680
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 12498
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

13824429-00

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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13824429-00

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN

2N4429

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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2N4429

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

SEMITRONICS CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN

2N4429A

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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2N4429A

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

ADELCO ELEKTRONIK GMBH

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN

5800583-942002-104

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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5800583-942002-104

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN

725016A0868-001

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

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725016A0868-001

TRANSISTOR

NSN, MFG P/N

5961009989314

NSN

5961-00-998-9314

MFG

QUARTERMASTER GENERAL

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14; HELICOPTER, MH-53E; WASP CLASS LHD; DIGITAL GROUP MULTIPLEXER, AN/TRC-138, - 173, -174, -175; WHIDBEY ISLAND CLASS LSD; AN/SRC-40 RADIO SET; FORRESTAL CLASS CV; TARAWA CLASS LHA; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 1.365 INCHES NOMINAL
OVERALL LENGTH: 0.695 INCHES MAXIMUM
OVERALL WIDTH: 1.365 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUN