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5961-01-380-2588
20 Products
80-00054-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802588
NSN
5961-01-380-2588
80-00054-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802588
NSN
5961-01-380-2588
MFG
GENERAL DYNAMICS OTS AEROSPACE INC. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.656 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 35.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEN-1541-450
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
SEN-1541-450
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
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SMC50388
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
SMC50388
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
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V12218
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
V12218
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
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838516
TRANSISTOR
NSN, MFG P/N
5961013801456
NSN
5961-01-380-1456
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MMBTH81T1
TRANSISTOR
NSN, MFG P/N
5961013801456
NSN
5961-01-380-1456
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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150K60A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802192
NSN
5961-01-380-2192
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3740.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.378 INCHES
OVERALL LENGTH: 133.72 MILLIMETERS NOMINAL
OVERALL WIDTH ACROSS FLATS: 26.67 MILLIMETERS MINIMUM AND 26.92 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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11200147-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802248
NSN
5961-01-380-2248
11200147-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802248
NSN
5961-01-380-2248
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6513
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/575 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1N6513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802248
NSN
5961-01-380-2248
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6513
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/575 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N6513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802248
NSN
5961-01-380-2248
JANTX1N6513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802248
NSN
5961-01-380-2248
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6513
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/575 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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2N6519
TRANSISTOR
NSN, MFG P/N
5961013802471
NSN
5961-01-380-2471
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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RELEASE 6556
TRANSISTOR
NSN, MFG P/N
5961013802471
NSN
5961-01-380-2471
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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773168
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802480
NSN
5961-01-380-2480
MFG
FLUKE CORPORATION
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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MPN7410-L20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802480
NSN
5961-01-380-2480
MPN7410-L20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802480
NSN
5961-01-380-2480
MFG
AEROFLEX / METELICS INC.
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
40-403396-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013802493
NSN
5961-01-380-2493
40-403396-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013802493
NSN
5961-01-380-2493
MFG
INTERLINK COMMUNICATIONS INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
KBU6B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013802493
NSN
5961-01-380-2493
KBU6B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013802493
NSN
5961-01-380-2493
MFG
GENERAL SEMICONDUCTOR INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
2N6515
TRANSISTOR
NSN, MFG P/N
5961013802516
NSN
5961-01-380-2516
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 250.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
352-1600-052
TRANSISTOR
NSN, MFG P/N
5961013802524
NSN
5961-01-380-2524
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL SURFACES GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL LENGTH: 0.910 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SRF4073H
TRANSISTOR
NSN, MFG P/N
5961013802524
NSN
5961-01-380-2524
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL SURFACES GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL LENGTH: 0.910 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SESCH75035F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802588
NSN
5961-01-380-2588
SESCH75035F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013802588
NSN
5961-01-380-2588
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.656 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 35.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
