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5961-01-010-9467
20 Products
4915496-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109467
NSN
5961-01-010-9467
4915496-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109467
NSN
5961-01-010-9467
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z216H15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109467
NSN
5961-01-010-9467
MFG
MACWHYTE CO DIV OF AMSTED INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4907923-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109468
NSN
5961-01-010-9468
4907923-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109468
NSN
5961-01-010-9468
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z216H22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109468
NSN
5961-01-010-9468
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4915496-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109469
NSN
5961-01-010-9469
4915496-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109469
NSN
5961-01-010-9469
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z216H23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010109469
NSN
5961-01-010-9469
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
101-000241
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
101-000241
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MFG
DATA GENERAL CORP M/S 9S17
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: MDA980-2
MANUFACTURERS CODE: 04713
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND CAPACITIVE LOAD; ENCAPSULATED; 70 VOLTS RMS AND 12 AMPS DC; TEMP RATING 25.0 DEG. CELSIUS; CORROSION PROTECTION; MOUNTING HOLES FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
320-9802
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
320-9802
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MFG
DDC PERTEC PERIPHERALS CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: MDA980-2
MANUFACTURERS CODE: 04713
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND CAPACITIVE LOAD; ENCAPSULATED; 70 VOLTS RMS AND 12 AMPS DC; TEMP RATING 25.0 DEG. CELSIUS; CORROSION PROTECTION; MOUNTING HOLES FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
505-255
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
505-255
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MFG
PLATH GMBH
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: MDA980-2
MANUFACTURERS CODE: 04713
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND CAPACITIVE LOAD; ENCAPSULATED; 70 VOLTS RMS AND 12 AMPS DC; TEMP RATING 25.0 DEG. CELSIUS; CORROSION PROTECTION; MOUNTING HOLES FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
755-5481
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
755-5481
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MFG
ITT CORPORATION DIV ITT CORPORATION ADVANCED ENGINEERING & SCIENCES DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: MDA980-2
MANUFACTURERS CODE: 04713
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND CAPACITIVE LOAD; ENCAPSULATED; 70 VOLTS RMS AND 12 AMPS DC; TEMP RATING 25.0 DEG. CELSIUS; CORROSION PROTECTION; MOUNTING HOLES FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
MDA980-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MDA980-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010110569
NSN
5961-01-011-0569
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: MDA980-2
MANUFACTURERS CODE: 04713
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND CAPACITIVE LOAD; ENCAPSULATED; 70 VOLTS RMS AND 12 AMPS DC; TEMP RATING 25.0 DEG. CELSIUS; CORROSION PROTECTION; MOUNTING HOLES FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
2500264-22
TRANSISTOR
NSN, MFG P/N
5961010110570
NSN
5961-01-011-0570
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
DESIGN CONTROL REFERENCE: SGB6049
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
RS1741
TRANSISTOR
NSN, MFG P/N
5961010110570
NSN
5961-01-011-0570
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: SGB6049
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SGB6049
TRANSISTOR
NSN, MFG P/N
5961010110570
NSN
5961-01-011-0570
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: SGB6049
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
ST89173-2
TRANSISTOR
NSN, MFG P/N
5961010110570
NSN
5961-01-011-0570
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: SGB6049
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
403246-2
TRANSISTOR
NSN, MFG P/N
5961010110571
NSN
5961-01-011-0571
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 403246-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 20284
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
86024
TRANSISTOR
NSN, MFG P/N
5961010110571
NSN
5961-01-011-0571
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 403246-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 20284
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
MSC86024
TRANSISTOR
NSN, MFG P/N
5961010110571
NSN
5961-01-011-0571
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 403246-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 20284
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2N6327
TRANSISTOR
NSN, MFG P/N
5961010110572
NSN
5961-01-011-0572
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 114.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
403726
TRANSISTOR
NSN, MFG P/N
5961010110572
NSN
5961-01-011-0572
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 114.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
