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5961-01-015-3739
20 Products
2841198-1A
SEMICONDUCTOR
NSN, MFG P/N
5961010153739
NSN
5961-01-015-3739
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR
Related Searches:
1400158-28
TRANSISTOR
NSN, MFG P/N
5961010153813
NSN
5961-01-015-3813
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SDT3515
TRANSISTOR
NSN, MFG P/N
5961010153813
NSN
5961-01-015-3813
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
403246-3
TRANSISTOR
NSN, MFG P/N
5961010153815
NSN
5961-01-015-3815
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.149 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.740 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 12909-403246 DRAWING
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND
Related Searches:
MSC80146
TRANSISTOR
NSN, MFG P/N
5961010153815
NSN
5961-01-015-3815
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.149 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.740 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 12909-403246 DRAWING
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND
Related Searches:
MSC86116
TRANSISTOR
NSN, MFG P/N
5961010153815
NSN
5961-01-015-3815
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.149 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.740 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 12909-403246 DRAWING
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND
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1N5016A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010153816
NSN
5961-01-015-3816
MFG
SEMICONDUCTOR DEVICES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.520 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
6501355
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010153816
NSN
5961-01-015-3816
MFG
EMBRAER - EMPRESA BRASILEIRA DE AERONAUTICA
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.520 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
267963
TRANSISTOR
NSN, MFG P/N
5961010154321
NSN
5961-01-015-4321
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 287623
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 89536
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
DN503
TRANSISTOR
NSN, MFG P/N
5961010154321
NSN
5961-01-015-4321
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 287623
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MANUFACTURERS CODE: 89536
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9332 209 10000
TRANSISTOR
NSN, MFG P/N
5961010154436
NSN
5961-01-015-4436
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
DESIGN CONTROL REFERENCE: BD702
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04713
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.653 INCHES NOMINAL
OVERALL WIDTH: 0.515 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
BD702
TRANSISTOR
NSN, MFG P/N
5961010154436
NSN
5961-01-015-4436
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: BD702
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04713
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.653 INCHES NOMINAL
OVERALL WIDTH: 0.515 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MHT7604
TRANSISTOR
NSN, MFG P/N
5961010155056
NSN
5961-01-015-5056
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: MHT7604
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 21845
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
VBE408-70
TRANSISTOR
NSN, MFG P/N
5961010155056
NSN
5961-01-015-5056
MFG
THALES NEDERLAND
Description
DESIGN CONTROL REFERENCE: MHT7604
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 21845
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
220Z007U02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
220Z007U02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
MFG
DELTA DATA SYSTEMS CORP
Description
DESIGN CONTROL REFERENCE: 3SF4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
OVERALL DIAMETER: 0.088 INCHES NOMINAL
OVERALL LENGTH: 2.402 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
3SF4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: 3SF4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
OVERALL DIAMETER: 0.088 INCHES NOMINAL
OVERALL LENGTH: 2.402 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
524-240-063
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
524-240-063
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
MFG
ELETTRONICA SPA
Description
DESIGN CONTROL REFERENCE: 3SF4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
OVERALL DIAMETER: 0.088 INCHES NOMINAL
OVERALL LENGTH: 2.402 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
A115D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155057
NSN
5961-01-015-5057
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: 3SF4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
OVERALL DIAMETER: 0.088 INCHES NOMINAL
OVERALL LENGTH: 2.402 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
EH350
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010155058
NSN
5961-01-015-5058
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
DESIGN CONTROL REFERENCE: EH350
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 83701
OVERALL LENGTH: 0.380 INCHES NOMINAL
OVERALL WIDTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
019-004825
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010155198
NSN
5961-01-015-5198
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
DESIGN CONTROL REFERENCE: 019-004987
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/ALQ-135(V); MRAP
INTERNAL CONFIGURATION: JUNCTION CONTACT SINGLE SEMICONDUCTOR
MANUFACTURERS CODE: 26916
OVERALL DIAMETER: 0.610 INCHES NOMINAL SINGLE SEMICONDUCTOR
OVERALL LENGTH: 0.875 INCHES NOMINAL SINGLE SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON SINGLE SEMICONDUCTOR
SPECIAL FEATURES: MATCHE PAIR PER PACKAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 BANANA PLUG SINGLE SEMICONDUCTOR
THE MANUFACTURERS DATA:
