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5961-01-013-7817
20 Products
1N5738B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137817
NSN
5961-01-013-7817
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6257 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
152-0442-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010135245
NSN
5961-01-013-5245
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
311423
DIODE CAP
NSN, MFG P/N
5961010135356
NSN
5961-01-013-5356
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
DIODE CAP
Related Searches:
231293-701
TRANSISTOR
NSN, MFG P/N
5961010135663
NSN
5961-01-013-5663
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: 6110-01-010-7202 REGULATOR,VOLTAGE S-3A ACFT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION AND 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 231293-701
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81413-231293 MANUFACTURERS SOURCE CONTROL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
A10075
TRANSISTOR
NSN, MFG P/N
5961010135663
NSN
5961-01-013-5663
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: 6110-01-010-7202 REGULATOR,VOLTAGE S-3A ACFT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION AND 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 231293-701
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81413-231293 MANUFACTURERS SOURCE CONTROL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
SJ3332H
TRANSISTOR
NSN, MFG P/N
5961010135663
NSN
5961-01-013-5663
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: 6110-01-010-7202 REGULATOR,VOLTAGE S-3A ACFT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION AND 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 231293-701
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81413-231293 MANUFACTURERS SOURCE CONTROL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
932173-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010136464
NSN
5961-01-013-6464
932173-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010136464
NSN
5961-01-013-6464
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 932173-1
MANUFACTURERS CODE: 06481
SPECIAL FEATURES: C/O:8 DIODES ENCAPSULATED,WIRE LEAD TERMINALS,0.375 IN.LG MAX,0.270 IN.W MAX,0.090 IN.H MAX;
THE MANUFACTURERS DATA:
Related Searches:
013-172
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010136999
NSN
5961-01-013-6999
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-450
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137000
NSN
5961-01-013-7000
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES NOMINAL
OVERALL LENGTH: 0.152 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.156 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2899033-01
TRANSISTOR
NSN, MFG P/N
5961010137407
NSN
5961-01-013-7407
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DESIGN CONTROL REFERENCE: 2899033-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:
Related Searches:
S29439
TRANSISTOR
NSN, MFG P/N
5961010137407
NSN
5961-01-013-7407
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: 2899033-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:
Related Searches:
CA3084
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137661
NSN
5961-01-013-7661
CA3084
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137661
NSN
5961-01-013-7661
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 6 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
I92-0001-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137694
NSN
5961-01-013-7694
I92-0001-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137694
NSN
5961-01-013-7694
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
OVERALL HEIGHT: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
Related Searches:
MPQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137694
NSN
5961-01-013-7694
MPQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010137694
NSN
5961-01-013-7694
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
OVERALL HEIGHT: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
Related Searches:
247AS-C1330-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010137699
NSN
5961-01-013-7699
247AS-C1330-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010137699
NSN
5961-01-013-7699
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 247AS-C1330-003
MANUFACTURERS CODE: 30003
SPECIAL FEATURES: SILICON;3-PHASE BRIDGE RECTIFIER;HERMETICALLY SEALED;M55 TO P150 DEG C OPERATING TEMP;1.000 IN. LG;0.420 IN. W;0.180 IN. H;5 TERMINALS;STORAGE TEMP RANGE:M62.0 TO P150.0 DEG CELCIUS
THE MANUFACTURERS DATA:
Related Searches:
S3BR15
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010137699
NSN
5961-01-013-7699
S3BR15
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010137699
NSN
5961-01-013-7699
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: 247AS-C1330-003
MANUFACTURERS CODE: 30003
SPECIAL FEATURES: SILICON;3-PHASE BRIDGE RECTIFIER;HERMETICALLY SEALED;M55 TO P150 DEG C OPERATING TEMP;1.000 IN. LG;0.420 IN. W;0.180 IN. H;5 TERMINALS;STORAGE TEMP RANGE:M62.0 TO P150.0 DEG CELCIUS
THE MANUFACTURERS DATA:
Related Searches:
40ED104
TRANSISTOR
NSN, MFG P/N
5961010137814
NSN
5961-01-013-7814
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
6096879-3
TRANSISTOR
NSN, MFG P/N
5961010137814
NSN
5961-01-013-7814
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
0-4M6-2AZZ5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137816
NSN
5961-01-013-7816
0-4M6-2AZZ5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137816
NSN
5961-01-013-7816
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
A531T011-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137816
NSN
5961-01-013-7816
A531T011-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010137816
NSN
5961-01-013-7816
MFG
TELEPHONE SYSTEMS/COMMUNICATIONS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
