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5961-01-026-2570
20 Products
151-0442-00
TRANSISTOR
NSN, MFG P/N
5961010262570
NSN
5961-01-026-2570
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80009-151-0442-00 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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74E4N677
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010261921
NSN
5961-01-026-1921
74E4N677
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010261921
NSN
5961-01-026-1921
MFG
NAVY, UNITED STATES DEPARTMENT OF THE SPAWAR DBA SPACE AND NAVAL WAFARE COMMAND
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
DESIGN CONTROL REFERENCE: 74E4N677
MANUFACTURERS CODE: 28687
MATERIAL: SILICON
OVERALL HEIGHT: 1.197 INCHES MAXIMUM
OVERALL LENGTH: 1.925 INCHES MAXIMUM
OVERALL WIDTH: 1.296 INCHES MAXIMUM
THE MANUFACTURERS DATA:
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MDA802
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010261921
NSN
5961-01-026-1921
MDA802
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010261921
NSN
5961-01-026-1921
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
DESIGN CONTROL REFERENCE: 74E4N677
MANUFACTURERS CODE: 28687
MATERIAL: SILICON
OVERALL HEIGHT: 1.197 INCHES MAXIMUM
OVERALL LENGTH: 1.925 INCHES MAXIMUM
OVERALL WIDTH: 1.296 INCHES MAXIMUM
THE MANUFACTURERS DATA:
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430005
RECTIFIER,SEMICONDUCTOR DEVICE
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5961010262002
NSN
5961-01-026-2002
430005
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010262002
NSN
5961-01-026-2002
MFG
NORTHERN TELECOM SYSTEMS CORP
Description
DESIGN CONTROL REFERENCE: 51811110
MANUFACTURERS CODE: 51357
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPECIAL FEATURES: INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
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655-052
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010262002
NSN
5961-01-026-2002
655-052
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010262002
NSN
5961-01-026-2002
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: 51811110
MANUFACTURERS CODE: 51357
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPECIAL FEATURES: INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
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2N2228
TRANSISTOR
NSN, MFG P/N
5961010262005
NSN
5961-01-026-2005
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 695388-3
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.280 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN
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695388-3
TRANSISTOR
NSN, MFG P/N
5961010262005
NSN
5961-01-026-2005
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 695388-3
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.280 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN
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2N6316
TRANSISTOR
NSN, MFG P/N
5961010262006
NSN
5961-01-026-2006
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 2.00 AMPERES MAXIMUM BASE CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLT
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74E4N679
TRANSISTOR
NSN, MFG P/N
5961010262006
NSN
5961-01-026-2006
MFG
NAVY, UNITED STATES DEPARTMENT OF THE SPAWAR DBA SPACE AND NAVAL WAFARE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 2.00 AMPERES MAXIMUM BASE CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLT
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2N6058
TRANSISTOR
NSN, MFG P/N
5961010262007
NSN
5961-01-026-2007
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.690 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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74E4N681
TRANSISTOR
NSN, MFG P/N
5961010262007
NSN
5961-01-026-2007
MFG
NAVY, UNITED STATES DEPARTMENT OF THE SPAWAR DBA SPACE AND NAVAL WAFARE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.690 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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371032-0002
PHOTOSENSOR
NSN, MFG P/N
5961010262380
NSN
5961-01-026-2380
MFG
SYPRIS ELECTRONICS LLC
Description
DESIGN CONTROL REFERENCE: 371032-0002
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SILICON,2 LEAD WIRES,NO.30 AWG STRANDED,RED AND BLACK PVC INSULATION,APPROX.0.250 IN.STRIP AND TIN DIP ON FREE END 6 IN.LONG,COATING IS DRI-FILM NO.88 FROM G.E.ON TOP ONLY,0.812IN.LONG,0.187 IN.WIDE
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELLANCE SYSTEMS
MANUFACTURERS CODE: 14028
THE MANUFACTURERS DATA:
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371032-2
PHOTOSENSOR
NSN, MFG P/N
5961010262380
NSN
5961-01-026-2380
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
DESIGN CONTROL REFERENCE: 371032-0002
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SILICON,2 LEAD WIRES,NO.30 AWG STRANDED,RED AND BLACK PVC INSULATION,APPROX.0.250 IN.STRIP AND TIN DIP ON FREE END 6 IN.LONG,COATING IS DRI-FILM NO.88 FROM G.E.ON TOP ONLY,0.812IN.LONG,0.187 IN.WIDE
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELLANCE SYSTEMS
MANUFACTURERS CODE: 14028
THE MANUFACTURERS DATA:
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HR1094-2
PHOTOSENSOR
NSN, MFG P/N
5961010262380
NSN
5961-01-026-2380
MFG
N A P SMD TECHNOLOGY INC
Description
DESIGN CONTROL REFERENCE: 371032-0002
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SILICON,2 LEAD WIRES,NO.30 AWG STRANDED,RED AND BLACK PVC INSULATION,APPROX.0.250 IN.STRIP AND TIN DIP ON FREE END 6 IN.LONG,COATING IS DRI-FILM NO.88 FROM G.E.ON TOP ONLY,0.812IN.LONG,0.187 IN.WIDE
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELLANCE SYSTEMS
MANUFACTURERS CODE: 14028
THE MANUFACTURERS DATA:
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5961010262435
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5961-01-026-2435
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5961010262435
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MFG
CARDION INC
Description
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
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44597 28126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
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5961-01-026-2435
44597 28126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
NSN
5961-01-026-2435
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
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52CLR00A0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
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5961-01-026-2435
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
NSN
5961-01-026-2435
MFG
BOOKHAM TECHNOLOGY PLC
Description
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
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CA3083F
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
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5961-01-026-2435
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NSN, MFG P/N
5961010262435
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5961-01-026-2435
MFG
INTERSIL CORPORATION
Description
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
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Q67000-A1929-Z
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
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5961-01-026-2435
Q67000-A1929-Z
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010262435
NSN
5961-01-026-2435
MFG
EPCOS AG
Description
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
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ED9840
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010262569
NSN
5961-01-026-2569
ED9840
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010262569
NSN
5961-01-026-2569
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
DESIGN CONTROL REFERENCE: ED9840
MANUFACTURERS CODE: 83701
MATERIAL: SILICON
OVERALL LENGTH: 6.500 INCHES MAXIMUM
OVERALL WIDTH: 1.375 INCHES MAXIMUM
SPECIAL FEATURES: PLASTIC CASE; SOLID STATE REPLACEMENT FOR ELECTRON TUBE TYPE 8020W
TERMINAL TYPE AND QUANTITY: 4 PIN
THE MANUFACTURERS DATA:
