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5961-01-029-8457
20 Products
2889748-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298457
NSN
5961-01-029-8457
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889748 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.138 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.262 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010297519
NSN
5961-01-029-7519
JAN2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010297519
NSN
5961-01-029-7519
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1910
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-204
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/204 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD W/T
Related Searches:
MM1712
TRANSISTOR
NSN, MFG P/N
5961010298109
NSN
5961-01-029-8109
MFG
MOTOROLA UK SALES LTD MOTOROLA SEM ICONDUCTORS GROUP
Description
TRANSISTOR
Related Searches:
BY206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298110
NSN
5961-01-029-8110
MFG
VISHAY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 3.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 7.62 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
403649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298111
NSN
5961-01-029-8111
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2888020-1
TRANSISTOR
NSN, MFG P/N
5961010298452
NSN
5961-01-029-8452
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
FN2208
TRANSISTOR
NSN, MFG P/N
5961010298452
NSN
5961-01-029-8452
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SFC4045
TRANSISTOR
NSN, MFG P/N
5961010298452
NSN
5961-01-029-8452
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
U2263
TRANSISTOR
NSN, MFG P/N
5961010298452
NSN
5961-01-029-8452
MFG
TELCOM SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
2887383-1
TRANSISTOR
NSN, MFG P/N
5961010298453
NSN
5961-01-029-8453
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2887383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
511-008
TRANSISTOR
NSN, MFG P/N
5961010298453
NSN
5961-01-029-8453
MFG
GENERAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2887383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
DMS 80064B
TRANSISTOR
NSN, MFG P/N
5961010298453
NSN
5961-01-029-8453
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2887383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
SFC3140
TRANSISTOR
NSN, MFG P/N
5961010298453
NSN
5961-01-029-8453
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2887383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
2868661-1
TRANSISTOR
NSN, MFG P/N
5961010298454
NSN
5961-01-029-8454
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2868661 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 38.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GAT
Related Searches:
M5065
TRANSISTOR
NSN, MFG P/N
5961010298454
NSN
5961-01-029-8454
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2868661 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 38.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GAT
Related Searches:
SD1G0027
TRANSISTOR
NSN, MFG P/N
5961010298454
NSN
5961-01-029-8454
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2868661 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 38.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GAT
Related Searches:
6803A38
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298455
NSN
5961-01-029-8455
MFG
SHALLTRONIX CORP
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2889748AP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298457
NSN
5961-01-029-8457
MFG
AMERICAN POWER DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889748 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.138 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.262 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C8234
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298457
NSN
5961-01-029-8457
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889748 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.138 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.262 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DT2166
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010298457
NSN
5961-01-029-8457
MFG
COMPENSATED DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889748 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.138 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.262 MAXIMUM NOMINAL REGULATOR VOLTAGE
