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5961-01-033-0826

20 Products

4803402-00409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330826

NSN

5961-01-033-0826

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4803402-00409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330826

NSN

5961-01-033-0826

MFG

OCEAN APPLIED RESEARCH CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -22.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

JAN2N5660

TRANSISTOR

NSN, MFG P/N

5961010330817

NSN

5961-01-033-0817

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JAN2N5660

TRANSISTOR

NSN, MFG P/N

5961010330817

NSN

5961-01-033-0817

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.188 INCHES MINIMUM AND 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: S

JANTX2N5660

TRANSISTOR

NSN, MFG P/N

5961010330817

NSN

5961-01-033-0817

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JANTX2N5660

TRANSISTOR

NSN, MFG P/N

5961010330817

NSN

5961-01-033-0817

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.188 INCHES MINIMUM AND 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: S

JAN2N3765

TRANSISTOR

NSN, MFG P/N

5961010330818

NSN

5961-01-033-0818

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JAN2N3765

TRANSISTOR

NSN, MFG P/N

5961010330818

NSN

5961-01-033-0818

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3765
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/396
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/396 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL L

103-336-001

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

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103-336-001

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

MFG

AYDIN CORP AYDIN CONTROLS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BASE SUPPLY VOLTAGE

DMS 87-023

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

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DMS 87-023

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BASE SUPPLY VOLTAGE

MM3008

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

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MM3008

TRANSISTOR

NSN, MFG P/N

5961010330819

NSN

5961-01-033-0819

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BASE SUPPLY VOLTAGE

ES4907-01

TRANSISTOR

NSN, MFG P/N

5961010330820

NSN

5961-01-033-0820

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ES4907-01

TRANSISTOR

NSN, MFG P/N

5961010330820

NSN

5961-01-033-0820

MFG

DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: -2.50 AMPERES MAXIMUM SOURCE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.5 MAXIMUM BASE TO EMITTER VOLTAGE, DC

JAN2N3772

TRANSISTOR

NSN, MFG P/N

5961010330820

NSN

5961-01-033-0820

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JAN2N3772

TRANSISTOR

NSN, MFG P/N

5961010330820

NSN

5961-01-033-0820

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: -2.50 AMPERES MAXIMUM SOURCE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.5 MAXIMUM BASE TO EMITTER VOLTAGE, DC

352-7506-022

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

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352-7506-022

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 580-0580-002 COLLINS SPECIFICATION SCREENING NO; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-7506 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,

SJ6239H

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

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SJ6239H

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 580-0580-002 COLLINS SPECIFICATION SCREENING NO; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-7506 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,

STI 352-7506-022

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

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STI 352-7506-022

TRANSISTOR

NSN, MFG P/N

5961010330821

NSN

5961-01-033-0821

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 580-0580-002 COLLINS SPECIFICATION SCREENING NO; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-7506 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,

586733-2

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

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586733-2

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5039
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/439
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/439 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U

7723-105B

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

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7723-105B

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

MFG

SBD ELECTRONIC SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5039
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/439
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/439 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U

JAN2N5039

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

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JAN2N5039

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5039
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/439
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/439 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U

S26030

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

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S26030

TRANSISTOR

NSN, MFG P/N

5961010330822

NSN

5961-01-033-0822

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5039
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/439
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/439 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U

5M5-1ZS1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330824

NSN

5961-01-033-0824

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5M5-1ZS1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330824

NSN

5961-01-033-0824

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 930.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

GS810HU4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330824

NSN

5961-01-033-0824

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GS810HU4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330824

NSN

5961-01-033-0824

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 930.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

5M6-0ZS1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330825

NSN

5961-01-033-0825

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5M6-0ZS1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330825

NSN

5961-01-033-0825

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 790.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

GS810HU6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330825

NSN

5961-01-033-0825

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GS810HU6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010330825

NSN

5961-01-033-0825

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 790.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM NOMINAL REGULATOR VOLTAGE