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5961-01-037-2191

20 Products

1-0002-0061-21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010372191

NSN

5961-01-037-2191

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1-0002-0061-21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010372191

NSN

5961-01-037-2191

MFG

QUADRI CORP

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5807
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

019-004430-351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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019-004430-351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

339648-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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339648-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

40-666-2414U

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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40-666-2414U

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

43912000-250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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43912000-250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

HONEYWELL REGELSYSTEME GMBH GESCHAEFTSBEREICH SONDERTECHNIK

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

CR0647F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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CR0647F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

SCIENTIFIC RADIO SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

JAN-1N6471

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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JAN-1N6471

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

BUNDESAMT FUER WEHRTECHNIK UNDBESCHA FFUNG -VERTEIDIGUNGSGERAETE

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

JAN1N647-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

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JAN1N647-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370111

NSN

5961-01-037-0111

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N647-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK R

10284631

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370515

NSN

5961-01-037-0515

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10284631

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370515

NSN

5961-01-037-0515

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 10284631
MANUFACTURERS CODE: 18876
OVERALL LENGTH: 0.720 INCHES NOMINAL
THE MANUFACTURERS DATA:

11668845

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370687

NSN

5961-01-037-0687

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11668845

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370687

NSN

5961-01-037-0687

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

Description

III END ITEM IDENTIFICATION: M60A1 RISE M60A3
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 11669569
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG

G704650

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370687

NSN

5961-01-037-0687

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G704650

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010370687

NSN

5961-01-037-0687

MFG

STEWART WARNER SOUTH WIND CORPORATION

Description

III END ITEM IDENTIFICATION: M60A1 RISE M60A3
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 11669569
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG

100JB05L

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010371027

NSN

5961-01-037-1027

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100JB05L

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010371027

NSN

5961-01-037-1027

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

353-9016-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010371094

NSN

5961-01-037-1094

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353-9016-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010371094

NSN

5961-01-037-1094

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 570.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 570.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2819B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-1500/114
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.075 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/114 GOVERNM

JAN1N2819B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010371094

NSN

5961-01-037-1094

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JAN1N2819B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010371094

NSN

5961-01-037-1094

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 570.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 570.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2819B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-1500/114
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.075 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/114 GOVERNM

13-823220-1

TRANSISTOR

NSN, MFG P/N

5961010371540

NSN

5961-01-037-1540

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13-823220-1

TRANSISTOR

NSN, MFG P/N

5961010371540

NSN

5961-01-037-1540

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

DESIGN CONTROL REFERENCE: 2N5397
III END ITEM IDENTIFICATION: EP-3E ACFT
MANUFACTURERS CODE: 17856
THE MANUFACTURERS DATA:

2N5397

TRANSISTOR

NSN, MFG P/N

5961010371540

NSN

5961-01-037-1540

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2N5397

TRANSISTOR

NSN, MFG P/N

5961010371540

NSN

5961-01-037-1540

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

DESIGN CONTROL REFERENCE: 2N5397
III END ITEM IDENTIFICATION: EP-3E ACFT
MANUFACTURERS CODE: 17856
THE MANUFACTURERS DATA:

SK3054

TRANSISTOR

NSN, MFG P/N

5961010372188

NSN

5961-01-037-2188

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SK3054

TRANSISTOR

NSN, MFG P/N

5961010372188

NSN

5961-01-037-2188

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.355 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

2501537-50

TRANSISTOR

NSN, MFG P/N

5961010372189

NSN

5961-01-037-2189

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2501537-50

TRANSISTOR

NSN, MFG P/N

5961010372189

NSN

5961-01-037-2189

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 07187-2501537 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SJ2966H

TRANSISTOR

NSN, MFG P/N

5961010372189

NSN

5961-01-037-2189

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SJ2966H

TRANSISTOR

NSN, MFG P/N

5961010372189

NSN

5961-01-037-2189

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 07187-2501537 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

231048-707

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010372191

NSN

5961-01-037-2191

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231048-707

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010372191

NSN

5961-01-037-2191

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5807
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE