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5961-01-041-7304
20 Products
1N4983
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4983
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110
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JAN1N5307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416816
NSN
5961-01-041-6816
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.40 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416817
NSN
5961-01-041-6817
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5530B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.053 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIS
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JAN1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416817
NSN
5961-01-041-6817
JAN1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416817
NSN
5961-01-041-6817
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5530B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.053 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIS
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VA-70-0312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416817
NSN
5961-01-041-6817
VA-70-0312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416817
NSN
5961-01-041-6817
MFG
SELEX GALILEO LTD
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5530B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.053 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIS
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1N5614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
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28491-0210-0420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
28491-0210-0420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
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479-1242-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
479-1242-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
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587565-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
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874-90202-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
874-90202-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
EATON CORPORATION DBA AEROSPACE & COMMERCIAL DIV DIV SENSING & CONTROLS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
Related Searches:
JANTXV1N5614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
JANTXV1N5614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010416818
NSN
5961-01-041-6818
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5614
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM RE
Related Searches:
122061-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010416820
NSN
5961-01-041-6820
122061-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010416820
NSN
5961-01-041-6820
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
DESIGN CONTROL REFERENCE: 122061-001
MANUFACTURERS CODE: 10138
SPECIAL FEATURES: 2 RECTIFIERS ENCASED 2.250 IN. LG;0.750 IN. H;3 SOLDER LUG TERMINALS
THE MANUFACTURERS DATA:
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122061-003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010416821
NSN
5961-01-041-6821
122061-003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010416821
NSN
5961-01-041-6821
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
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2N5371
TRANSISTOR
NSN, MFG P/N
5961010417288
NSN
5961-01-041-7288
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5871 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND
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1N965B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417290
NSN
5961-01-041-7290
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N965B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM
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JANTXV1N965B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417290
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5961-01-041-7290
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417290
NSN
5961-01-041-7290
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N965B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM
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1N5379
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4983
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110
Related Searches:
790-342-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
790-342-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
MFG
BOW INDUSTRIES OF VIRGINIA INC DBA BOW INDUSTRIES
Description
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4983
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110
Related Searches:
925115-30B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
925115-30B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4983
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110
Related Searches:
ASC1534531
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
ASC1534531
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010417304
NSN
5961-01-041-7304
MFG
ASC PTY LTD
Description
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4983
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110
