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5961-01-046-4269
20 Products
A396M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010464269
NSN
5961-01-046-4269
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT
DESIGN CONTROL REFERENCE: A397M
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.565 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 1.656 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
A397M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010464269
NSN
5961-01-046-4269
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT
DESIGN CONTROL REFERENCE: A397M
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.565 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 1.656 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
799086-101
DIODE ASSEMBLY
NSN, MFG P/N
5961010464370
NSN
5961-01-046-4370
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
DIODE ASSEMBLY
Related Searches:
DTS-4026
TRANSISTOR
NSN, MFG P/N
5961010464537
NSN
5961-01-046-4537
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
TRANSISTOR
Related Searches:
77805-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010464765
NSN
5961-01-046-4765
77805-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010464765
NSN
5961-01-046-4765
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
MAJOR COMPONENTS: DIODE 2; PRINTED CIRCUIT BOARD 1
Related Searches:
38722-15
TRANSISTOR
NSN, MFG P/N
5961010464885
NSN
5961-01-046-4885
MFG
TELEPHONICS CORP/PRD INSTRUMENTS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
12FR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010464887
NSN
5961-01-046-4887
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1250.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
087262-1
TRANSISTOR
NSN, MFG P/N
5961010465095
NSN
5961-01-046-5095
MFG
CARLETON LIFE SUPPORT SYSTEMS INC. DBA COBHAM MISSION SYSTEM
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 087262-1
MANUFACTURERS CODE: 99251
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
2507601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465234
NSN
5961-01-046-5234
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UT5160V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465234
NSN
5961-01-046-5234
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SVT450-5
TRANSISTOR
NSN, MFG P/N
5961010465882
NSN
5961-01-046-5882
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.440 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
35812E,OPTHO5
TRANSISTOR
NSN, MFG P/N
5961010465883
NSN
5961-01-046-5883
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/APR-38
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
35812E-HO5
TRANSISTOR
NSN, MFG P/N
5961010465883
NSN
5961-01-046-5883
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/APR-38
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
A400017
TRANSISTOR
NSN, MFG P/N
5961010465883
NSN
5961-01-046-5883
MFG
MICROPHASE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/APR-38
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
1N5657A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
OVERALL LENGTH: 0.570 INCHES MAXIMUM
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 30 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.1 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
3522 500 22747
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
3522 500 22747
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
MFG
THALES NEDERLAND
Description
OVERALL LENGTH: 0.570 INCHES MAXIMUM
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 30 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.1 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
703PS45-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
OVERALL LENGTH: 0.570 INCHES MAXIMUM
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 30 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.1 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
9335 657 40682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
9335 657 40682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465884
NSN
5961-01-046-5884
MFG
THALES OPTRONIQUE SA
Description
OVERALL LENGTH: 0.570 INCHES MAXIMUM
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 30 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.1 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
3522 059 64760
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465885
NSN
5961-01-046-5885
3522 059 64760
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465885
NSN
5961-01-046-5885
MFG
ALCATEL-LUCENT NETWORK SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/APR-38
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 01341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: P2768-3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5082-2811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010465885
NSN
5961-01-046-5885
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/APR-38
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 01341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: P2768-3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK
