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5961-01-063-4549
20 Products
DZ730731C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010634549
NSN
5961-01-063-4549
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
6931426-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010634550
NSN
5961-01-063-4550
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CATHODE END COLORED BAND OR DOT; TERMINAL LUG AND SLEEVING ON EACH WIRE LEAD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N3095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
2N3095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
MFG
TARGET ELECTRONICS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
35-436
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
35-436
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
78-5302
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
78-5302
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
80RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
80RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
948E500PC262
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
948E500PC262
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010634552
NSN
5961-01-063-4552
MFG
WARD LEONARD ELECTRIC COMPANY INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
94781400
TRANSISTOR
NSN, MFG P/N
5961010635183
NSN
5961-01-063-5183
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 31917-94781400 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
152-0199-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635184
NSN
5961-01-063-5184
152-0199-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635184
NSN
5961-01-063-5184
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
66-8039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635184
NSN
5961-01-063-5184
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
0N228027-2
TRANSISTOR
NSN, MFG P/N
5961010635461
NSN
5961-01-063-5461
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0N228027-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.345 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228027-2 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
6N150PC50
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635462
NSN
5961-01-063-5462
MFG
EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KGB327A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
KGB327A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635462
NSN
5961-01-063-5462
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KGB327A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
0N228025-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635464
NSN
5961-01-063-5464
0N228025-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635464
NSN
5961-01-063-5464
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DESIGN CONTROL REFERENCE: 0N228025-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228025-3 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
0N228026-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635465
NSN
5961-01-063-5465
0N228026-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635465
NSN
5961-01-063-5465
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 0N228026-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD
TEST DATA DOCUMENT: 98230-0N228026-1 DRAWING
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
0N228030-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635466
NSN
5961-01-063-5466
0N228030-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635466
NSN
5961-01-063-5466
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 0N228030-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228030-1 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
0N228031-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635467
NSN
5961-01-063-5467
0N228031-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635467
NSN
5961-01-063-5467
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 0N228031-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228031-1 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
11207519
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010635835
NSN
5961-01-063-5835
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MDA3500
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010635997
NSN
5961-01-063-5997
MDA3500
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010635997
NSN
5961-01-063-5997
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SM-C-807150
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010636385
NSN
5961-01-063-6385
SM-C-807150
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010636385
NSN
5961-01-063-6385
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
MAJOR COMPONENTS: TRANSISTOR 2,INSULATOR DISK 2,PRINTED WIRING BOARD 1
