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5961-01-326-7140
20 Products
1906-0333
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013267140
NSN
5961-01-326-7140
1906-0333
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013267140
NSN
5961-01-326-7140
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES PEAK FORWARD SURGE CURRENT AND 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
OVERALL HEIGHT: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.935 INCHES NOMINAL
OVERALL WIDTH: 0.760 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
6206032-001
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013263912
NSN
5961-01-326-3912
6206032-001
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013263912
NSN
5961-01-326-3912
MFG
NAVAL SEA SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 6206032-001
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
OVERALL DIAMETER: 0.860 INCHES NOMINAL
OVERALL HEIGHT: 0.400 INCHES NOMINAL
SPECIAL FEATURES: MATL SANTOPRENE,BLACK
THE MANUFACTURERS DATA:
Related Searches:
1901-1130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1AB028100003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
1AB028100003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
ALCATEL - LUCENT FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
598
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
FBL-00-248
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
FBL-00-248
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MUR-840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
CONDOR D C POWER SUPPLIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MUR840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013264304
NSN
5961-01-326-4304
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
800711-0001
TRANSISTOR
NSN, MFG P/N
5961013265655
NSN
5961-01-326-5655
MFG
SYPRIS ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
1013949
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013265656
NSN
5961-01-326-5656
MFG
ELGIN SWEEPER COMPANY INC DBA ELGIN SWEEPER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
516913825
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013265696
NSN
5961-01-326-5696
516913825
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013265696
NSN
5961-01-326-5696
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
BU426A
TRANSISTOR
NSN, MFG P/N
5961013265918
NSN
5961-01-326-5918
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER AND 10.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-218
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.182 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 0.551 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 113.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.470 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 30.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERIS
Related Searches:
GC1706F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013265919
NSN
5961-01-326-5919
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
III END ITEM IDENTIFICATION: DIRECTION FINDER SET,SOUTHWEST REARCH INSTITUTE INC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL FORWARD VOLTAGE, AVERAGE
Related Searches:
BAT42
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013265920
NSN
5961-01-326-5920
MFG
THOMSON-CSF COMPONENTS CORP
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
12705350-1
TRANSISTOR
NSN, MFG P/N
5961013266291
NSN
5961-01-326-6291
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: TRANSISTOR,SILICON,N-P-N,HIGH VOLTAGE USED ON DIRECTION FINDER SET
Related Searches:
BA479G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266292
NSN
5961-01-326-6292
MFG
AEG CORP
Description
III END ITEM IDENTIFICATION: THERMAL RECORDER
OVERALL DIAMETER: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 55.9 MILLIMETERS MAXIMUM
Related Searches:
3110275-2
TRANSISTOR
NSN, MFG P/N
5961013266957
NSN
5961-01-326-6957
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 3110275-2
III END ITEM IDENTIFICATION: F-14 ACFT (AWG-9)
MANUFACTURERS CODE: 82577
THE MANUFACTURERS DATA:
Related Searches:
TH18-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266959
NSN
5961-01-326-6959
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
III END ITEM IDENTIFICATION: BULK STORE UNIT5821-99-792-7328
Related Searches:
JANTX1N6332
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266960
NSN
5961-01-326-6960
JANTX1N6332
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266960
NSN
5961-01-326-6960
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6332
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5821-01-231-5592 RECEIVER TRANSMITTER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION_!!
Related Searches:
JANTXV1N6116A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266961
NSN
5961-01-326-6961
JANTXV1N6116A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013266961
NSN
5961-01-326-6961
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6116A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.
