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5961-01-063-9011
20 Products
15960
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639011
NSN
5961-01-063-9011
MFG
NMC/WOLLARD INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SS0392
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638187
NSN
5961-01-063-8187
SS0392
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638187
NSN
5961-01-063-8187
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 85131604-10
MANUFACTURERS CODE: 32770
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.000 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ANY ACCEPTABLE LOAD TYPE; EPOXY CASE; PROTECTED FROM CORROSION AND MOISTURE; TWO 0.187 IN. DIA. MTG HOLES,1.750 INCENTER TO CENTER; ONE EACH SURGE SUPPRESSOR MTD ON RECTIFIER
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
2SK19-GR
TRANSISTOR
NSN, MFG P/N
5961010638590
NSN
5961-01-063-8590
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN CONTROL REFERENCE: 2SK19-GR
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27014
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
007-0289-01
TRANSISTOR
NSN, MFG P/N
5961010638592
NSN
5961-01-063-8592
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: D41K2
INCLOSURE MATERIAL: METAL AND PLASTIC
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
D41K2
TRANSISTOR
NSN, MFG P/N
5961010638592
NSN
5961-01-063-8592
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: D41K2
INCLOSURE MATERIAL: METAL AND PLASTIC
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
007-0238-00
TRANSISTOR
NSN, MFG P/N
5961010638593
NSN
5961-01-063-8593
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: PN4917
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27014
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2N4917
TRANSISTOR
NSN, MFG P/N
5961010638593
NSN
5961-01-063-8593
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: PN4917
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27014
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
FPN4917
TRANSISTOR
NSN, MFG P/N
5961010638593
NSN
5961-01-063-8593
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: PN4917
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27014
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
Q02-4917-000
TRANSISTOR
NSN, MFG P/N
5961010638593
NSN
5961-01-063-8593
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: PN4917
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27014
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
7558475-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638596
NSN
5961-01-063-8596
7558475-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638596
NSN
5961-01-063-8596
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
DESIGN CONTROL REFERENCE: DT790221B
MANUFACTURERS CODE: 12954
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
DT790221B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638596
NSN
5961-01-063-8596
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
DESIGN CONTROL REFERENCE: DT790221B
MANUFACTURERS CODE: 12954
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
353-2983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638597
NSN
5961-01-063-8597
353-2983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638597
NSN
5961-01-063-8597
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
DESIGN CONTROL REFERENCE: 353-2983-001
MANUFACTURERS CODE: 12954
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
0N228029-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638598
NSN
5961-01-063-8598
0N228029-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010638598
NSN
5961-01-063-8598
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 0N228029-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N228029-1 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
10162-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010638816
NSN
5961-01-063-8816
10162-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010638816
NSN
5961-01-063-8816
MFG
XEROX CORP
Description
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL 029
Related Searches:
CX773
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638890
NSN
5961-01-063-8890
MFG
MICRO USPD INC
Description
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: SIX JANTXVIN6074 ULTRA FAST RECOVERY,SILICON POWER RECTIFIERS DIODES,CONNECTED IN PARALLEL
Related Searches:
PC72260-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638890
NSN
5961-01-063-8890
PC72260-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638890
NSN
5961-01-063-8890
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: SIX JANTXVIN6074 ULTRA FAST RECOVERY,SILICON POWER RECTIFIERS DIODES,CONNECTED IN PARALLEL
Related Searches:
SA6905
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638890
NSN
5961-01-063-8890
SA6905
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638890
NSN
5961-01-063-8890
MFG
SEMTECH CORPORATION
Description
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: SIX JANTXVIN6074 ULTRA FAST RECOVERY,SILICON POWER RECTIFIERS DIODES,CONNECTED IN PARALLEL
Related Searches:
CX775
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638891
NSN
5961-01-063-8891
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
PC7261-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638891
NSN
5961-01-063-8891
PC7261-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638891
NSN
5961-01-063-8891
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
SA7041
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638891
NSN
5961-01-063-8891
SA7041
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010638891
NSN
5961-01-063-8891
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
