Featured Products

My Quote Request

No products added yet

5961-01-081-0895

20 Products

STA9274

TRANSISTOR

NSN, MFG P/N

5961010810895

NSN

5961-01-081-0895

View More Info

STA9274

TRANSISTOR

NSN, MFG P/N

5961010810895

NSN

5961-01-081-0895

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER SWITCHING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.400 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

TR48-01A

TRANSISTOR

NSN, MFG P/N

5961010810895

NSN

5961-01-081-0895

View More Info

TR48-01A

TRANSISTOR

NSN, MFG P/N

5961010810895

NSN

5961-01-081-0895

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER SWITCHING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.400 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

G278434-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010810896

NSN

5961-01-081-0896

View More Info

G278434-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010810896

NSN

5961-01-081-0896

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 0.26 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.8 MAXIMUM NOMINAL REGUL

JANTX1N4483

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010810896

NSN

5961-01-081-0896

View More Info

JANTX1N4483

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010810896

NSN

5961-01-081-0896

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.26 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.8 MAXIMUM NOMINAL REGUL

928885-1B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

View More Info

928885-1B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

MFG

RAYTHEON COMPANY

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

CSP220

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

View More Info

CSP220

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

MFG

CRYSTALONICS INC.

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

HQ01153

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

View More Info

HQ01153

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

SQ2037H1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

View More Info

SQ2037H1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

SQH3361

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

View More Info

SQH3361

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010810965

NSN

5961-01-081-0965

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

37675426-004

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010811522

NSN

5961-01-081-1522

View More Info

37675426-004

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010811522

NSN

5961-01-081-1522

MFG

RAYTHEON CO

Description

DESIGN CONTROL REFERENCE: 37675426-004
III END ITEM IDENTIFICATION: F-16 SIMULATED AIRCRAFT MAINTENANCE TRAINER
III USAGE DESIGN: LED ASSY,16 PIN
MAJOR COMPONENTS: MOUNTING BOARD 1; DIODE,LIGHT EMITTING 2; POST,SPACER,HEX 2
MANUFACTURERS CODE: 08783
THE MANUFACTURERS DATA:

37675426-001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010811523

NSN

5961-01-081-1523

View More Info

37675426-001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010811523

NSN

5961-01-081-1523

MFG

RAYTHEON CO

Description

DESIGN CONTROL REFERENCE: 37675426-001
III END ITEM IDENTIFICATION: F-16 SIMULATED A/C MAINT. TR
III USAGE DESIGN: LED ASSY,16 PIN
MAJOR COMPONENTS: MOUNTING BOARD 1; DIODE,LIGHT EMITTING 5; POST,SPACER,HEX 2
MANUFACTURERS CODE: 08783
THE MANUFACTURERS DATA:

843749-2

RETAINER,DIODE

NSN, MFG P/N

5961010811934

NSN

5961-01-081-1934

View More Info

843749-2

RETAINER,DIODE

NSN, MFG P/N

5961010811934

NSN

5961-01-081-1934

MFG

RAYTHEON COMPANY

843749-1

RETAINER,DIODE

NSN, MFG P/N

5961010811969

NSN

5961-01-081-1969

View More Info

843749-1

RETAINER,DIODE

NSN, MFG P/N

5961010811969

NSN

5961-01-081-1969

MFG

RAYTHEON COMPANY

MSC3000MICPAC

TRANSISTOR

NSN, MFG P/N

5961010812603

NSN

5961-01-081-2603

View More Info

MSC3000MICPAC

TRANSISTOR

NSN, MFG P/N

5961010812603

NSN

5961-01-081-2603

MFG

MICROWAVE SEMICONDUCTOR CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN

404206

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010812604

NSN

5961-01-081-2604

View More Info

404206

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010812604

NSN

5961-01-081-2604

MFG

TARGET CORPORATION DBA TARGET

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: T510028007AB
III END ITEM IDENTIFICATION: COMMUNICATIONS
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL

T510028007AB

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010812604

NSN

5961-01-081-2604

View More Info

T510028007AB

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010812604

NSN

5961-01-081-2604

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: T510028007AB
III END ITEM IDENTIFICATION: COMMUNICATIONS
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL

7610001P065

TRANSISTOR

NSN, MFG P/N

5961010812987

NSN

5961-01-081-2987

View More Info

7610001P065

TRANSISTOR

NSN, MFG P/N

5961010812987

NSN

5961-01-081-2987

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

1300175-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813028

NSN

5961-01-081-3028

View More Info

1300175-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813028

NSN

5961-01-081-3028

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN ELECTRONIC SYSTEMS DIVISION DIV SPACE & ISR SYSTEMS DIVISION

11673975

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813129

NSN

5961-01-081-3129

View More Info

11673975

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813129

NSN

5961-01-081-3129

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

Description

MAJOR COMPONENTS: TERMINAL BOARD 1; TERMINAL STUD 10; SEMICONDUCTOR DEVICE,DIODE (IN4246) 4
MOUNTING CONFIGURATION: 4 HOLES 0.120 DIA 2.230 C-TO-C ALONG LENGTH X 1.000 C-TO-C ALONG W
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 2.625 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL

JAN1N4246

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813129

NSN

5961-01-081-3129

View More Info

JAN1N4246

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010813129

NSN

5961-01-081-3129

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

MAJOR COMPONENTS: TERMINAL BOARD 1; TERMINAL STUD 10; SEMICONDUCTOR DEVICE,DIODE (IN4246) 4
MOUNTING CONFIGURATION: 4 HOLES 0.120 DIA 2.230 C-TO-C ALONG LENGTH X 1.000 C-TO-C ALONG W
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 2.625 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL