My Quote Request
5961-01-081-0895
20 Products
STA9274
TRANSISTOR
NSN, MFG P/N
5961010810895
NSN
5961-01-081-0895
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER SWITCHING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.400 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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TR48-01A
TRANSISTOR
NSN, MFG P/N
5961010810895
NSN
5961-01-081-0895
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER SWITCHING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.400 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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G278434-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810896
NSN
5961-01-081-0896
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.26 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.8 MAXIMUM NOMINAL REGUL
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JANTX1N4483
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810896
NSN
5961-01-081-0896
JANTX1N4483
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810896
NSN
5961-01-081-0896
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.26 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.8 MAXIMUM NOMINAL REGUL
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
928885-1B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
MFG
CRYSTALONICS INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
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SQH3361
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
SQH3361
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010810965
NSN
5961-01-081-0965
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-86
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
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37675426-004
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010811522
NSN
5961-01-081-1522
37675426-004
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010811522
NSN
5961-01-081-1522
MFG
RAYTHEON CO
Description
DESIGN CONTROL REFERENCE: 37675426-004
III END ITEM IDENTIFICATION: F-16 SIMULATED AIRCRAFT MAINTENANCE TRAINER
III USAGE DESIGN: LED ASSY,16 PIN
MAJOR COMPONENTS: MOUNTING BOARD 1; DIODE,LIGHT EMITTING 2; POST,SPACER,HEX 2
MANUFACTURERS CODE: 08783
THE MANUFACTURERS DATA:
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37675426-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010811523
NSN
5961-01-081-1523
37675426-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010811523
NSN
5961-01-081-1523
MFG
RAYTHEON CO
Description
DESIGN CONTROL REFERENCE: 37675426-001
III END ITEM IDENTIFICATION: F-16 SIMULATED A/C MAINT. TR
III USAGE DESIGN: LED ASSY,16 PIN
MAJOR COMPONENTS: MOUNTING BOARD 1; DIODE,LIGHT EMITTING 5; POST,SPACER,HEX 2
MANUFACTURERS CODE: 08783
THE MANUFACTURERS DATA:
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843749-2
RETAINER,DIODE
NSN, MFG P/N
5961010811934
NSN
5961-01-081-1934
MFG
RAYTHEON COMPANY
Description
RETAINER,DIODE
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843749-1
RETAINER,DIODE
NSN, MFG P/N
5961010811969
NSN
5961-01-081-1969
MFG
RAYTHEON COMPANY
Description
RETAINER,DIODE
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MSC3000MICPAC
TRANSISTOR
NSN, MFG P/N
5961010812603
NSN
5961-01-081-2603
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
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404206
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010812604
NSN
5961-01-081-2604
404206
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010812604
NSN
5961-01-081-2604
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: T510028007AB
III END ITEM IDENTIFICATION: COMMUNICATIONS
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL
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T510028007AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010812604
NSN
5961-01-081-2604
T510028007AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010812604
NSN
5961-01-081-2604
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: T510028007AB
III END ITEM IDENTIFICATION: COMMUNICATIONS
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL
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7610001P065
TRANSISTOR
NSN, MFG P/N
5961010812987
NSN
5961-01-081-2987
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE ASSEMBLY
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010813028
NSN
5961-01-081-3028
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN ELECTRONIC SYSTEMS DIVISION DIV SPACE & ISR SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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SEMICONDUCTOR DEVICE ASSEMBLY
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5961010813129
NSN
5961-01-081-3129
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010813129
NSN
5961-01-081-3129
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
MAJOR COMPONENTS: TERMINAL BOARD 1; TERMINAL STUD 10; SEMICONDUCTOR DEVICE,DIODE (IN4246) 4
MOUNTING CONFIGURATION: 4 HOLES 0.120 DIA 2.230 C-TO-C ALONG LENGTH X 1.000 C-TO-C ALONG W
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 2.625 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
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JAN1N4246
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010813129
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5961-01-081-3129
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010813129
NSN
5961-01-081-3129
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
MAJOR COMPONENTS: TERMINAL BOARD 1; TERMINAL STUD 10; SEMICONDUCTOR DEVICE,DIODE (IN4246) 4
MOUNTING CONFIGURATION: 4 HOLES 0.120 DIA 2.230 C-TO-C ALONG LENGTH X 1.000 C-TO-C ALONG W
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 2.625 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL