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5961-01-122-8093
20 Products
890309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228093
NSN
5961-01-122-8093
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-9034-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228094
NSN
5961-01-122-8094
353-9034-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228094
NSN
5961-01-122-8094
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SA5881
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228094
NSN
5961-01-122-8094
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
130072-013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
130072-013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
MFG
SCJ ASSOCIATES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.750 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
400000-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
400000-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
MFG
C N T R INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.750 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
7573-0102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
7573-0102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011228095
NSN
5961-01-122-8095
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.750 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
607-3674-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228096
NSN
5961-01-122-8096
607-3674-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011228096
NSN
5961-01-122-8096
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
109226
TRANSISTOR
NSN, MFG P/N
5961011228956
NSN
5961-01-122-8956
MFG
RANTEC MICROWAVE SYSTEMS INC .
Description
TRANSISTOR
Related Searches:
719657-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011228958
NSN
5961-01-122-8958
MFG
RAYTHEON COMPANY
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
719654-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011228959
NSN
5961-01-122-8959
MFG
RAYTHEON COMPANY
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
5082-2835
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011229171
NSN
5961-01-122-9171
MFG
HEWLETT PACKARD CO
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 96906-MIS-STD-202 STANDARD AND 96906-MIL-STD-750 STANDARD
Related Searches:
805563-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011229171
NSN
5961-01-122-9171
MFG
RAYTHEON COMPANY
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 96906-MIS-STD-202 STANDARD AND 96906-MIL-STD-750 STANDARD
Related Searches:
A2X1621
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011229171
NSN
5961-01-122-9171
MFG
M/A-COM INC. DIV BURLINGTON SEMICONDUCTOR OPERATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 96906-MIS-STD-202 STANDARD AND 96906-MIL-STD-750 STANDARD
Related Searches:
A2XA1621
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011229171
NSN
5961-01-122-9171
MFG
FEI MICROWAVE INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 96906-MIS-STD-202 STANDARD AND 96906-MIL-STD-750 STANDARD
Related Searches:
QSCH-1678
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011229171
NSN
5961-01-122-9171
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 96906-MIS-STD-202 STANDARD AND 96906-MIL-STD-750 STANDARD
Related Searches:
2817A401-06
TRANSISTOR
NSN, MFG P/N
5961011230690
NSN
5961-01-123-0690
MFG
TAIYO YUDEN USA INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
145530-20
TRANSISTOR
NSN, MFG P/N
5961011230691
NSN
5961-01-123-0691
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING PAD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
315161-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011230692
NSN
5961-01-123-0692
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
GT92913F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011230692
NSN
5961-01-123-0692
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2817A401-04
TRANSISTOR
NSN, MFG P/N
5961011230693
NSN
5961-01-123-0693
MFG
TAIYO YUDEN USA INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 857.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-
