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5961-01-113-1661
20 Products
22729-6200
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131661
NSN
5961-01-113-1661
22729-6200
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131661
NSN
5961-01-113-1661
MFG
FREQUENCY ELECTRONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TE
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AD830
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131661
NSN
5961-01-113-1661
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TE
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MP830
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131661
NSN
5961-01-113-1661
MFG
MICRO POWER SYSTEMS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TE
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U421
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131661
NSN
5961-01-113-1661
MFG
INTERFET CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TE
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TZ81
TRANSISTOR
NSN, MFG P/N
5961011131808
NSN
5961-01-113-1808
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.135 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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928876-1B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
928876-1B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES NOMINAL
OVERALL WIDTH: 0.280 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
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CSP126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
CSP126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
MFG
CRYSTALONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES NOMINAL
OVERALL WIDTH: 0.280 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
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HQ1121
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
HQ1121
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011131954
NSN
5961-01-113-1954
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES NOMINAL
OVERALL WIDTH: 0.280 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
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5082-0508
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132343
NSN
5961-01-113-2343
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0015-1
SEMICONDUCTOR MATERIAL: SILICON
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SCDDE0015-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132343
NSN
5961-01-113-2343
SCDDE0015-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132343
NSN
5961-01-113-2343
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0015-1
SEMICONDUCTOR MATERIAL: SILICON
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5082-0660
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132344
NSN
5961-01-113-2344
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0017-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
SCDDE0017-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132344
NSN
5961-01-113-2344
SCDDE0017-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132344
NSN
5961-01-113-2344
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0017-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
5082-0509
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132345
NSN
5961-01-113-2345
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0016-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
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SCDDE0016-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132345
NSN
5961-01-113-2345
SCDDE0016-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132345
NSN
5961-01-113-2345
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 78022
MFR SOURCE CONTROLLING REFERENCE: SCDDE0016-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
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MC7165
DIODE
NSN, MFG P/N
5961011132710
NSN
5961-01-113-2710
MFG
MICROSEMI CORPORATION
Description
DIODE
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725016A0866-001
TRANSISTOR
NSN, MFG P/N
5961011132781
NSN
5961-01-113-2781
MFG
QUARTERMASTER GENERAL
Description
TRANSISTOR
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1940-3333
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011132782
NSN
5961-01-113-2782
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
615294-903
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011133025
NSN
5961-01-113-3025
615294-903
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011133025
NSN
5961-01-113-3025
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 615294-903
MANUFACTURERS CODE: 37695
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.245 INCHES MAXIMUM
OVERALL WIDTH: 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.375 INCHES MINIMUM
THE MANUFACTURERS DATA:
Related Searches:
JAN1N6048A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011133026
NSN
5961-01-113-3026
JAN1N6048A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011133026
NSN
5961-01-113-3026
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM DARK CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6048A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCU
Related Searches:
3252595
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011133027
NSN
5961-01-113-3027
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC
DESIGN CONTROL REFERENCE: 3252595
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.117 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.060 INCHES MINIMUM AND 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 82577-3252595 DRAWING
THE MANUFACTURERS DATA:
