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5961-01-128-2290
20 Products
1N5932A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282290
NSN
5961-01-128-2290
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 18.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: AIRCRAFT, GALAXY C-5
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282290
NSN
5961-01-128-2290
9333 902 70112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282290
NSN
5961-01-128-2290
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 18.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: AIRCRAFT, GALAXY C-5
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282291
NSN
5961-01-128-2291
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SPACER,TRANSISTOR
NSN, MFG P/N
5961011282344
NSN
5961-01-128-2344
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 3365437-1
GENERAL CHARACTERISTICS ITEM DESCRIPTION: ALUMINUM ALLOY 6061-T4,QQ-A-250/11; CHROMATE COAT,MIL-C-5541,CLASS 1A; 1.250 IN. LG; 0.750 IN. W; 0.125 IN. THK; 0.570 IN. LG,0.220 IN. W SLOT LOCATED ALONG LENGTH 0.420 FROM END; TWO 0.138-32 UNC 2A THD MTG HOLES 0.950 IN. C TO C
MANUFACTURERS CODE: 82577
THE MANUFACTURERS DATA:
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TRANSISTOR
NSN, MFG P/N
5961011282786
NSN
5961-01-128-2786
MFG
PRINTRONIX INC.
Description
TRANSISTOR
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NSN, MFG P/N
5961011282788
NSN
5961-01-128-2788
MFG
PRINTRONIX INC.
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961011282796
NSN
5961-01-128-2796
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
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NSN, MFG P/N
5961011282797
NSN
5961-01-128-2797
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961011282799
NSN
5961-01-128-2799
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282800
NSN
5961-01-128-2800
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282800
NSN
5961-01-128-2800
MFG
THALES COMPONENTS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282805
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NSN, MFG P/N
5961011282805
NSN
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MFG
PRINTRONIX INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282805
NSN
5961-01-128-2805
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282806
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282806
NSN
5961-01-128-2806
MFG
PRINTRONIX INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282807
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5961-01-128-2807
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282807
NSN
5961-01-128-2807
MFG
PRINTRONIX INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282807
NSN
5961-01-128-2807
MFG
THALES TRAINING - SIMULATION SA
Description
SEMICONDUCTOR DEVICE,DIODE
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3870-123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282808
NSN
5961-01-128-2808
MFG
HICKOK INCORPORATED
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282809
NSN
5961-01-128-2809
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282810
NSN
5961-01-128-2810
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282811
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5961-01-128-2811
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282811
NSN
5961-01-128-2811
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011282812
NSN
5961-01-128-2812
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
