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5961-01-131-3744
20 Products
23-023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313744
NSN
5961-01-131-3744
23-023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313744
NSN
5961-01-131-3744
MFG
CONCURRENT COMPUTER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
1N1345AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1204AR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!
Related Searches:
1N1345RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
MFG
GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1204AR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!
Related Searches:
6C30-R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
MFG
DUCOMMUN TECHNOLOGIES INC. DBA AMERICAN ELECTRONICS
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1204AR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!
Related Searches:
71-4946-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
71-4946-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
MFG
DEPARTMENT OF DEFENSE PROJECT MANAGER-MOBILE ELECTRIC POWER
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1204AR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!
Related Searches:
JANTX1N1204AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
JANTX1N1204AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011312442
NSN
5961-01-131-2442
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1204AR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION_!
Related Searches:
4902-02-1350
TRANSISTOR
NSN, MFG P/N
5961011313696
NSN
5961-01-131-3696
MFG
WAVETEK RF PRODUCTS INC
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
4998-00-0048
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313698
NSN
5961-01-131-3698
4998-00-0048
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313698
NSN
5961-01-131-3698
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
SD203DC MATCHED PAIR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313698
NSN
5961-01-131-3698
SD203DC MATCHED PAIR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313698
NSN
5961-01-131-3698
MFG
CALOGIC LLC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
4889-00-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313700
NSN
5961-01-131-3700
4889-00-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313700
NSN
5961-01-131-3700
MFG
WAVETEK RF PRODUCTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4889-00-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313701
NSN
5961-01-131-3701
4889-00-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313701
NSN
5961-01-131-3701
MFG
WAVETEK RF PRODUCTS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.156 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
4898-00-0016
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313702
NSN
5961-01-131-3702
4898-00-0016
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011313702
NSN
5961-01-131-3702
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.094 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.182 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.100 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1S954
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313703
NSN
5961-01-131-3703
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.980 INCHES MAXIMUM
OVERALL LENGTH: 4.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 50.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
524-0008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313703
NSN
5961-01-131-3703
MFG
KEPCO INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.980 INCHES MAXIMUM
OVERALL LENGTH: 4.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 50.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1S2676
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313704
NSN
5961-01-131-3704
MFG
NEC AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
521-0029
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011313704
NSN
5961-01-131-3704
MFG
KEPCO INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M57-7820
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
M57-7820
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
MFG
MILTOPE CORPORATION DBA VT MILTOPE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA7915
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
SA7915
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA9110
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
SA9110
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313705
NSN
5961-01-131-3705
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
66-718-006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313744
NSN
5961-01-131-3744
66-718-006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011313744
NSN
5961-01-131-3744
MFG
ASTEC AMERICA INC .
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
