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5961-01-143-7744
20 Products
2N6727
TRANSISTOR
NSN, MFG P/N
5961011437744
NSN
5961-01-143-7744
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-237AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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RELEASE 6806
TRANSISTOR
NSN, MFG P/N
5961011437744
NSN
5961-01-143-7744
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-237AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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2SC2021LNSF
TRANSISTOR
NSN, MFG P/N
5961011437745
NSN
5961-01-143-7745
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
TRANSISTOR
Related Searches:
2SC2021SF
TRANSISTOR
NSN, MFG P/N
5961011437746
NSN
5961-01-143-7746
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
TRANSISTOR
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2SC2021LNR
TRANSISTOR
NSN, MFG P/N
5961011437747
NSN
5961-01-143-7747
MFG
ROHM CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.134 INCHES NOMINAL
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.154 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 180.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 390.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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2SC1741R
TRANSISTOR
NSN, MFG P/N
5961011437748
NSN
5961-01-143-7748
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
TRANSISTOR
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GBPC10-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011437749
NSN
5961-01-143-7749
GBPC10-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011437749
NSN
5961-01-143-7749
MFG
GENERAL SEMICONDUCTOR INC
Description
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
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KBPC1002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011437749
NSN
5961-01-143-7749
KBPC1002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011437749
NSN
5961-01-143-7749
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
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A531A066-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437750
NSN
5961-01-143-7750
A531A066-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437750
NSN
5961-01-143-7750
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.319 INCHES NOMINAL
TERMINAL LENGTH: 1.291 INCHES MINIMUM AND 1.364 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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GZ509-09G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437750
NSN
5961-01-143-7750
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.319 INCHES NOMINAL
TERMINAL LENGTH: 1.291 INCHES MINIMUM AND 1.364 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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GZ50909G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437750
NSN
5961-01-143-7750
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.319 INCHES NOMINAL
TERMINAL LENGTH: 1.291 INCHES MINIMUM AND 1.364 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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LN21RPH
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437751
NSN
5961-01-143-7751
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
SEMICONDUCTOR DEVICE,DIODE
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MMCM918HXV
TRANSISTOR
NSN, MFG P/N
5961011437785
NSN
5961-01-143-7785
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: AN/PRC-66B
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479-1380-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437787
NSN
5961-01-143-7787
479-1380-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437787
NSN
5961-01-143-7787
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: AN/AJN-16
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 479-1380-001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.425 INCHES MINIMUM AND 2.465 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
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704-15K36T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437787
NSN
5961-01-143-7787
704-15K36T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437787
NSN
5961-01-143-7787
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: AN/AJN-16
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 479-1380-001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.425 INCHES MINIMUM AND 2.465 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
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GZ14901C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011437787
NSN
5961-01-143-7787
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: AN/AJN-16
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 479-1380-001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.425 INCHES MINIMUM AND 2.465 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
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153-0653-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011438333
NSN
5961-01-143-8333
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: PNP ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92 ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011438341
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5961-01-143-8341
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011438341
NSN
5961-01-143-8341
MFG
WESTINGHOUSE ELECTRIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.70 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4493
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NOMINAL
Related Searches:
JAN1N4493
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011438341
NSN
5961-01-143-8341
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.70 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4493
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NOMINAL
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UZ447
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011438341
NSN
5961-01-143-8341
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.70 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4493
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NOMINAL
