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5961-01-144-1129
20 Products
476700
TRANSISTOR
NSN, MFG P/N
5961011441129
NSN
5961-01-144-1129
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
477448
TRANSISTOR
NSN, MFG P/N
5961011441130
NSN
5961-01-144-1130
MFG
FLUKE CORPORATION
Description
TRANSISTOR
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SM102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441132
NSN
5961-01-144-1132
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0A90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441133
NSN
5961-01-144-1133
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C30423
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011441134
NSN
5961-01-144-1134
C30423
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011441134
NSN
5961-01-144-1134
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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D21691
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011441135
NSN
5961-01-144-1135
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
C31186
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011441136
NSN
5961-01-144-1136
C31186
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011441136
NSN
5961-01-144-1136
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
5244-83
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441172
NSN
5961-01-144-1172
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.465 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
FBL-00-118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441172
NSN
5961-01-144-1172
FBL-00-118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441172
NSN
5961-01-144-1172
MFG
TDK-LAMBDA AMERICAS INC. D IV TDK-LAMBDA AMERICAS-LOW POWER
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.465 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
FBL00-118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441172
NSN
5961-01-144-1172
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.465 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
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UES802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441172
NSN
5961-01-144-1172
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.465 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE
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353-9016-730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
353-9016-730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4561B
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: A-10,FLT SIM 50237
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/114
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
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8879400003-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
8879400003-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4561B
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: A-10,FLT SIM 50237
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/114
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
JANTX1N4561B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
JANTX1N4561B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441237
NSN
5961-01-144-1237
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4561B
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: A-10,FLT SIM 50237
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/114
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
87488
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011441239
NSN
5961-01-144-1239
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLT
Related Searches:
SM-A-104220
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011441239
NSN
5961-01-144-1239
SM-A-104220
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011441239
NSN
5961-01-144-1239
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLT
Related Searches:
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441584
NSN
5961-01-144-1584
BT487-4004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441584
NSN
5961-01-144-1584
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BTY87-400R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441584
NSN
5961-01-144-1584
BTY87-400R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441584
NSN
5961-01-144-1584
MFG
PHILIPS ELECTRONICS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZG20120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011441585
NSN
5961-01-144-1585
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
QDSP3515
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011441619
NSN
5961-01-144-1619
QDSP3515
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011441619
NSN
5961-01-144-1619
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICES,UNITIZED
