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5961-01-178-8922
20 Products
SA8775
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
SA8775
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-803400 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.020 INCHES MAXIMUM
OVERALL LENGTH: 1.380 INCHES MAXIMUM
OVERALL WIDTH: 0.630 INCHES MAXIMUM
SPECIAL FEATURES: COMMON ANODE, CASE ISOLATED
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
SDA287-8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
SDA287-8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
MFG
SOLID STATE DEVICES INC.
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-803400 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.020 INCHES MAXIMUM
OVERALL LENGTH: 1.380 INCHES MAXIMUM
OVERALL WIDTH: 0.630 INCHES MAXIMUM
SPECIAL FEATURES: COMMON ANODE, CASE ISOLATED
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
SM-A-803400-8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
SM-A-803400-8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788922
NSN
5961-01-178-8922
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-803400 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.020 INCHES MAXIMUM
OVERALL LENGTH: 1.380 INCHES MAXIMUM
OVERALL WIDTH: 0.630 INCHES MAXIMUM
SPECIAL FEATURES: COMMON ANODE, CASE ISOLATED
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
652-1224
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
652-1224
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 424.0 REVERSE VOLTAGE, TOTAL RMS AND 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
SA5845
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
SA5845
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 424.0 REVERSE VOLTAGE, TOTAL RMS AND 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
SM-C-800831-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
SM-C-800831-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011788923
NSN
5961-01-178-8923
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 424.0 REVERSE VOLTAGE, TOTAL RMS AND 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
30697-19
TRANSISTOR
NSN, MFG P/N
5961011789529
NSN
5961-01-178-9529
MFG
CELAB LTD
Description
TRANSISTOR
Related Searches:
6844W10P005
TRANSISTOR
NSN, MFG P/N
5961011790407
NSN
5961-01-179-0407
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
6844W10P001
TRANSISTOR
NSN, MFG P/N
5961011790408
NSN
5961-01-179-0408
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
6749W10P011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011790409
NSN
5961-01-179-0409
6749W10P011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011790409
NSN
5961-01-179-0409
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
DESIGN CONTROL REFERENCE: 6749W10P011
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 97424
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
741C7640-04-020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011790411
NSN
5961-01-179-0411
741C7640-04-020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011790411
NSN
5961-01-179-0411
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C7640-04-020
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 86360-741C7640-04 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
GA1057
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011790411
NSN
5961-01-179-0411
GA1057
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011790411
NSN
5961-01-179-0411
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C7640-04-020
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 86360-741C7640-04 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
741C5040-37-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011790412
NSN
5961-01-179-0412
741C5040-37-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011790412
NSN
5961-01-179-0412
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C5040-37-021
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 86360-741C5040-37 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ1627
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011790412
NSN
5961-01-179-0412
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C5040-37-021
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 86360-741C5040-37 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2625156G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011791760
NSN
5961-01-179-1760
2625156G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011791760
NSN
5961-01-179-1760
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: AN/ALQ-172(V)1/2 COMMON
MAJOR COMPONENTS: MOUNTING BD 1,JANTX1N5557 DIODE TRANZORB 14
Related Searches:
2625148G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011791761
NSN
5961-01-179-1761
2625148G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011791761
NSN
5961-01-179-1761
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: AN/ALQ-172(V) 1/2 COMMON
MAJOR COMPONENTS: MOUNTING BD 1,DIODES 31
Related Searches:
27A0038
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011792631
NSN
5961-01-179-2631
27A0038
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011792631
NSN
5961-01-179-2631
MFG
SIEMENS ENERGY & AUTOMATION INC. DBA SIEMENS AIRFIELD SOLUTIONS DIV SIEMENS ENERGY & AUTOMATION DBA SIEMENS AIRFIELD SOLUTIONS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 3.375 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; PLASTIC CASE ENCLOSURE; TEMP RATING 150.0 DEG. CELSIUS; TWO MOUNTING SLOTS 0.169 IN. DIA
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SDH5KS
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011792631
NSN
5961-01-179-2631
SDH5KS
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011792631
NSN
5961-01-179-2631
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 3.375 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; PLASTIC CASE ENCLOSURE; TEMP RATING 150.0 DEG. CELSIUS; TWO MOUNTING SLOTS 0.169 IN. DIA
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
75885251-1
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011793203
NSN
5961-01-179-3203
MFG
MAGNETIC PERIPHERALS INC OKLAHOMA CITY OPNS SUB OF CONTROL DATA CORP
Description
SEMICONDUCTOR DEVIC
Related Searches:
802-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011793215
NSN
5961-01-179-3215
802-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011793215
NSN
5961-01-179-3215
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.115 INCHES MINIMUM AND 1.135 INCHES MAXIMUM
OVERALL WIDTH: 1.115 INCHES MINIMUM AND 1.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
