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5961-01-250-5815
20 Products
H980054-001B
TRANSISTOR
NSN, MFG P/N
5961012505815
NSN
5961-01-250-5815
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE
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V10977
TRANSISTOR
NSN, MFG P/N
5961012505815
NSN
5961-01-250-5815
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE
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261347
TRANSISTOR
NSN, MFG P/N
5961012506030
NSN
5961-01-250-6030
MFG
FLUKE CORPORATION
Description
TRANSISTOR
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616692-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506031
NSN
5961-01-250-6031
616692-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506031
NSN
5961-01-250-6031
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7588255P0001
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012506033
NSN
5961-01-250-6033
7588255P0001
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012506033
NSN
5961-01-250-6033
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
OVERALL DIAMETER: 0.082 INCHES NOMINAL
OVERALL LENGTH: 0.418 INCHES NOMINAL
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258S006-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
258S006-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
MFG
EMS DEVELOPMENT CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 7 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR
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CD431290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
CD431290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 7 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR
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CM431290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
CM431290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
MFG
POWEREX INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 7 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR
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SKKT90/12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
SKKT90/12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506044
NSN
5961-01-250-6044
MFG
SEMIKRON INTL INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 7 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR
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352-1042-040
TRANSISTOR
NSN, MFG P/N
5961012506841
NSN
5961-01-250-6841
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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FN4711
TRANSISTOR
NSN, MFG P/N
5961012506841
NSN
5961-01-250-6841
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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352-9117-040
TRANSISTOR
NSN, MFG P/N
5961012506842
NSN
5961-01-250-6842
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.037 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.037 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SMBF1019
TRANSISTOR
NSN, MFG P/N
5961012506842
NSN
5961-01-250-6842
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.037 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.037 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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HV5FS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506844
NSN
5961-01-250-6844
MFG
H V COMPONENT ASSOCIATES INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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922-6139-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
922-6139-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
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DKV-6522-73
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
DKV-6522-73
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
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KV32-6139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
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SMV1490
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012506845
NSN
5961-01-250-6845
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
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1855-0469
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506846
NSN
5961-01-250-6846
1855-0469
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012506846
NSN
5961-01-250-6846
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: C-5 GALAXY AIRCRAFT.
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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1N6058A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012508049
NSN
5961-01-250-8049
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.224 INCHES NOMINAL
OVERALL LENGTH: 0.570 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 65.1 MAXIMUM BREAKDOWN VOLTAGE, DC
