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5961-01-169-8015
20 Products
102815-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698015
NSN
5961-01-169-8015
102815-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698015
NSN
5961-01-169-8015
MFG
ROLM CORP MIL SPEC COMPUTERS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SDA 267-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698015
NSN
5961-01-169-8015
SDA 267-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698015
NSN
5961-01-169-8015
MFG
SOLID STATE DEVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
102816-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698016
NSN
5961-01-169-8016
102816-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698016
NSN
5961-01-169-8016
MFG
ROLM CORP MIL SPEC COMPUTERS
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
SDA 267-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698016
NSN
5961-01-169-8016
SDA 267-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011698016
NSN
5961-01-169-8016
MFG
SOLID STATE DEVICES INC.
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
13074137
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011698797
NSN
5961-01-169-8797
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: TARGET ACQUISITION DESIGNATION SIGHT, PILOT
Related Searches:
13084404
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011698798
NSN
5961-01-169-8798
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
140SEA186
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011698798
NSN
5961-01-169-8798
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5664
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011698798
NSN
5961-01-169-8798
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
13075430
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011698872
NSN
5961-01-169-8872
13075430
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011698872
NSN
5961-01-169-8872
MFG
PROGRAM MANAGER ADVANCED ATTACK HELICOPTER BARCOM AMCPM-AAH
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
29996
TRANSISTOR
NSN, MFG P/N
5961011699077
NSN
5961-01-169-9077
MFG
CELAB LTD
Description
III END ITEM IDENTIFICATION: F-16 FLT SUMULATOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MATCHED SET OF TRANSISTORS
Related Searches:
1309
TRANSISTOR
NSN, MFG P/N
5961011699078
NSN
5961-01-169-9078
MFG
CELAB LTD
Description
III END ITEM IDENTIFICATION: F-16 FLIGHT SIMULATOR
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
8880300015-2
TRANSISTOR
NSN, MFG P/N
5961011699886
NSN
5961-01-169-9886
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
TRANSISTOR
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44A340344P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
44A340344P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
BAE SYSTEMS CONTROLS INC.
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
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A27318
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
A27318
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
MBDA UK LTD
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
CA3045F/3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
CA3045F/3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
HARRIS CORP FINDLAY OPNS
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
CA3045F3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
CA3045F3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
BAE SYSTEMS AUSTRALIA LTD
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
LM3045J/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
LM3045J/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
LM3045J883
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
LM3045J883
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
NATIONAL SEMICONDUCTOR UK LTD
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
U03045-F
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
U03045-F
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
UA3045DMQB
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
UA3045DMQB
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011700111
NSN
5961-01-170-0111
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
