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5961-01-181-6675
20 Products
71-1316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816675
NSN
5961-01-181-6675
MFG
MEGGITT UK LTD T/A MEGGITT AVIONICS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 7.6 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 26.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.5 MAXIMUM REVERSE VOLTAGE, DC
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166319
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816676
NSN
5961-01-181-6676
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 50.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GZ14901A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816676
NSN
5961-01-181-6676
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 50.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
917AS700-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816677
NSN
5961-01-181-6677
917AS700-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816677
NSN
5961-01-181-6677
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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JAN1N963B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816677
NSN
5961-01-181-6677
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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917AS700-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816678
NSN
5961-01-181-6678
917AS700-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816678
NSN
5961-01-181-6678
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N964B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011816678
NSN
5961-01-181-6678
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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151-0622-00
TRANSISTOR
NSN, MFG P/N
5961011817424
NSN
5961-01-181-7424
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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89300414
TRANSISTOR
NSN, MFG P/N
5961011817424
NSN
5961-01-181-7424
MFG
THALES AIR DEFENCE
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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3130358G001
TRANSISTOR
NSN, MFG P/N
5961011817425
NSN
5961-01-181-7425
MFG
ITT CORPORATION
Description
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.531 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
81813600000
TRANSISTOR
NSN, MFG P/N
5961011817425
NSN
5961-01-181-7425
MFG
PLESSEY SPA
Description
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.531 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
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999/4/43079/138
TRANSISTOR
NSN, MFG P/N
5961011817425
NSN
5961-01-181-7425
MFG
SELEX GALILEO LTD
Description
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.531 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
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MJ16012
TRANSISTOR
NSN, MFG P/N
5961011817425
NSN
5961-01-181-7425
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.531 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
152-0149-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
152-0149-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
DZ780511B (1N961B)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZB35009/C3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
SZB35009/C3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z5406
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817427
NSN
5961-01-181-7427
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0579-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817428
NSN
5961-01-181-7428
152-0579-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817428
NSN
5961-01-181-7428
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0647-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817429
NSN
5961-01-181-7429
152-0647-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817429
NSN
5961-01-181-7429
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0661-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817430
NSN
5961-01-181-7430
152-0661-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011817430
NSN
5961-01-181-7430
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
